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S9014

更新时间: 2024-11-18 06:09:55
品牌 Logo 应用领域
平盛电子 - PFS 晶体晶体管光电二极管放大器
页数 文件大小 规格书
1页 149K
描述
TRANSISTOR (NPN)

S9014 数据手册

  
S9014  
TRANSISTOR (NPN)  
TO-92  
1. EMITTER  
2. BASE  
FEATURES  
z
z
z
High total power dissipation.(PC=0.45W)  
High hFE and good linearity  
Complementary to S9015  
3. COLLECTOR  
1 2 3  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
50  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
45  
V
5
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
0.1  
A
PC  
0.45  
150  
-55-150  
W
TJ  
Tstg  
Storage Temperature  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
MIN  
50  
45  
5
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=100μA, IE=0  
IC= 1mA, IB=0  
V
IE=100μA, IC=0  
VCB=50V, IE=0  
V
0.1  
0.1  
0.1  
1000  
0.3  
1
μA  
μA  
μA  
Collector cut-off current  
ICEO  
VCE=35V, IB=0  
Emitter cut-off current  
IEBO  
VEB= 5V, IC=0  
DC current gain  
hFE  
VCE=5V, IC= 1mA  
IC=100mA, IB= 5mA  
IC=100mA, IB= 5mA  
60  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
V
V
V
CE=5V, IC= 10mA  
Transition frequency  
fT  
150  
MHz  
f=30MHz  
CLASSIFICATION OF hFE(1)  
Rank  
A
B
C
D
60-150  
200-300  
250-300  
300-400  
Range  
Web Site:  
WWW.PS-PFS.COM  

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100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3