Datasheet > S9014

S9014

更新时间： 2024-09-23 06:09:55

品牌	Logo	应用领域
DAYA		晶体晶体管光电二极管放大器
页数	文件大小	规格书
2页	117K
描述
TO-92 Plastic-Encapsulate Transistors

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中文翻译

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数据手册

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S9014 数据手册

TO-92 Plastic-Encapsulate Transistors

TO-92

S9014

TRANSISTOR (NPN)

1. EMITTER

2. BASE

FEATURES

High total power dissipation.(P_C=0.45W)

High hFE and good linearity

Complementary to S9015

3. COLLECTOR

1 2 3

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

0.1

P_C

0.45

150

-55-150

℃

T_J

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=100μA, I_E=0

I_C= 1mA, I_B=0

I_E=100μA, I_C=0

V_CB=50V, I_E=0

0.1

1000

0.3

μA

Collector cut-off current

I_CEO

V_CE=35V, I_B=0

Emitter cut-off current

I_EBO

V_EB= 5V, I_C=0

DC current gain

h_FE

V_CE=5V, I_C= 1mA

I_C=100mA, I_B= 5mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

_CE=5V, I_C= 10mA

Transition frequency

f_T

150

MHz

f=30MHz

CLASSIFICATION OF h_FE(1)

Rank

60-150

100-300

200-600

400-1000

Range

中文翻译

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与S9014相关器件

型号	品牌	获取价格	描述	数据表
S9014A	WEITRON	获取价格	Transistor
S9014A	CJ	获取价格	Transistor
S9014A(TO-92)	CJ	获取价格	Transistor
S9014-A-BP	MCC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
S9014A-BP	MCC	获取价格	暂无描述
S9014A-G	WEITRON	获取价格	Transistor
S9014-AP-HF	MCC	获取价格	Small Signal Bipolar Transistor,
S9014B	CJ	获取价格	Transistor
S9014B	WEITRON	获取价格	Transistor
S9014B	MCC	获取价格	100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3