Datasheet > S9012M

S9012M

更新时间： 2024-11-18 08:55:39

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体晶体管
页数	文件大小	规格书
3页	192K
描述
TRANSISTOR

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中文翻译

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数据手册

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S9012M 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

WBFBP-03B Plastic-Encapsulate Transistors

S9012M

TRANSISTOR

WBFBP-03B

(1.2×1.2×0.5)

unit: mm

DESCRIPTION

PNP Epitaxial Silicon Transistor

TOP

FEATURES

Complementary to S9013M

Excellent h_FElinearity

1. BASE

2. EMITTER

3. COLLECTOR

APPLICATION

BACK

150mW Output Amplifier of Potable Radios in Class

B Push-pull Operation.

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,

DVD-ROM,Note book PC, etc.)

MARKING: 2T1

2T1

B E

MAXIMUM RATINGS T_A=25℃ unless otherwise noted

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-40

V_CEO

V_EBO

I_C

-25

-5

Collector Current -Continuous

Collector Dissipation

-500

℃

P_C

150

T_J

Junction Temperature

Storage Temperature

150

-55-150

T_stg

℃

ELECTRICAL CHARACTERISTICS（Tamb=25℃

unless otherwise specified）

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-40

-25

-5

I_C= -100μA, I_E=0

I_C= -1mA, I_B=0

I_E=-100μA, I_C=0

V_CB=-40 V ,I_E=0

-0.1

400

-0.6

-1.2

μA

Collector cut-off current

I_CEO

V_CE=-20V ,I_B=0

Emitter cut-off current

I_EBO

V_EB= -5V , I_C=0

DC current gain

h_FE

V_CE=-1V, I_C=-50mA

I_C=-500mA, I_B= -50mA

V_CE=-6V, I_C= -20mA

f=30MHz

120

150

Collector-emitter saturation voltage

Base-emitter saturation voltage

_CE(sat)

_BE(sat)

Transition frequency

MHz

f_T

Collector output capacitance

C_ob

V_CB=-10V,I_E=0,f=1MHz

12 3

中文翻译

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