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S9012L PDF预览

S9012L

更新时间: 2024-02-05 13:52:01
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
2页 180K
描述
Transistor

S9012L 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.59
Base Number Matches:1

S9012L 数据手册

 浏览型号S9012L的Datasheet PDF文件第2页 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD  
SOT-23 Plastic-Encapsulate Transistors  
SOT-23  
S9012  
TRANSISTOR (PNP)  
FEATURES  
1. BASE  
2. EMITTER  
z
Complementary to S9013  
Excellent hFE linearity  
3. COLLECTOR  
z
MARKING: 2T1  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
Parameter  
Value  
-40  
Units  
V
VCBO  
Collector-Base Voltage  
VCEO  
VEBO  
IC  
-25  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
-5  
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
-500  
300  
mA  
mW  
PC  
Tj  
150  
Tstg  
Storage Temperature  
-55-150  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
IC= -100μA, IE=0  
IC= -1mA, IB=0  
MIN  
-40  
-25  
-5  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
IE=-100μA, IC=0  
VCB=-40V, IE=0  
-0.1  
-0.1  
-0.1  
400  
-0.6  
-1.2  
μA  
μA  
μA  
Collector cut-off current  
ICEO  
VCE=-20V, IB=0  
Emitter cut-off current  
IEBO  
VEB= -5V, IC=0  
DC current gain  
hFE  
VCE=-1V, IC= -50mA  
IC=-500mA, IB= -50mA  
IC=-500mA, IB= -50mA  
120  
150  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
V
CE(sat)  
BE(sat)  
V
V
V
VCE=-6V, IC= -20mA  
f=30MHz  
Transition frequency  
fT  
MHz  
pF  
Collector output capacitance  
Cob  
5
VCB=-10V,IE=0,f=1MHz  
CLASSIFICATION OF hFE  
Rank  
L
H
J
120-200  
200-350  
300-400  
Range  

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