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S8X8TS2 PDF预览

S8X8TS2

更新时间: 2024-11-05 03:33:55
品牌 Logo 应用领域
力特 - LITTELFUSE 栅极触发装置可控硅整流器光电二极管
页数 文件大小 规格书
9页 236K
描述
EV Series 0.8A Sensitive SCR

S8X8TS2 技术参数

生命周期:Active零件包装代码:SOT-223
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.62其他特性:UL RECOGNIZED, SENSITIVE GATE
外壳连接:ANODE配置:SINGLE
最大直流栅极触发电流:0.05 mAJESD-30 代码:R-PDSO-G4
JESD-609代码:e3元件数量:1
端子数量:4最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大均方根通态电流:0.8 A
断态重复峰值电压:800 V重复峰值反向电压:800 V
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
触发设备类型:SCRBase Number Matches:1

S8X8TS2 数据手册

 浏览型号S8X8TS2的Datasheet PDF文件第2页浏览型号S8X8TS2的Datasheet PDF文件第3页浏览型号S8X8TS2的Datasheet PDF文件第4页浏览型号S8X8TS2的Datasheet PDF文件第5页浏览型号S8X8TS2的Datasheet PDF文件第6页浏览型号S8X8TS2的Datasheet PDF文件第7页 
                                                                
                                                                                       
                                                                
                                                                                       
Teccor® brandThyristors  
Silicon Controlled Rectifiers  
SxX8xSx EV Series 0.8A Sensitive SCR  
Description  
New device series offers high static dv/dt and lower turn  
off (tq) sensitive SCR with its small die planar construction  
EFTJHOꢀꢁ*UꢁJTꢁTQFDJmDBMMZꢁEFTJHOFEꢁGPSꢁ('$*ꢁꢂ(SPVOEꢁ'BVMUꢁ  
$JSDVJUꢁ*OUFSSVQUFSꢃꢁBOEꢁ(BTꢁ*HOJUJPOꢁBQQMJDBUJPOTꢀꢁ"MMꢁ  
SCRs junctions are glass-passivated to ensure long term  
reliability and parametric stability.  
Features  
tꢁꢁ3P)4ꢁDPNQMJBOU  
tꢁ)JHIꢁEWꢆEUꢁOPJTFꢁJNNVOJUZ  
tꢁ5ISVꢅIPMFꢁBOEꢁTVSGBDFꢁ  
tꢁ  
*NQSPWFEꢁUVSOꢅPGGꢁUJNFꢁꢂUq)  
mount packages  
< 25 ꢀsec  
tꢁ  
tꢁ  
4VSHFꢁDVSSFOUꢁꢁ  
capability > 10Amps  
tꢁ  
4FOTJUJWFꢁHBUFꢁGPSꢁEJSFDUꢁ  
microprocessor interface  
Main Features  
#MPDLJOHꢁWPMUBHFꢁ  
Symbol  
IT(RMS)  
Value  
0.8  
Unit  
A
( VDRM / VRRM  
)
capability - up to 800V  
VDRM / VRRM  
I(5  
400 to 800  
5 to 200  
V
Schematic Symbol  
ꢀA  
A
Applications  
5IFꢁ4Y9ꢄY4xꢁTFSJFTꢁJTꢁTQFDJmDBMMZꢁEFTJHOFEꢁGPSꢁ('$*ꢁ  
ꢂ(SPVOEꢁ'BVMUꢁ$JSDVJUꢁ*OUFSSVQUFSꢃꢁBOEꢁHBTꢁJHOJUJPOꢁ  
applications.  
G
K
Absolute Maximum Ratings  
Symbol  
Parameter  
Value  
Unit  
TO-92  
SOT-89  
SOT-223  
TO-92  
TC = 55°C  
TC = 60°C  
TL = 60°C  
TC = 55°C  
TC = 60°C  
TL = 60°C  
F= 50Hz  
0.8  
0.8  
A
A
IT(RMS)  
RMS on-state current (full sine wave)  
Average on-state current  
0.8  
A
0.51  
0.51  
0.51  
8
A
IT(AV)  
SOT-89  
SOT-223  
A
A
TO-92  
SOT-89  
SOT-223  
A
Non repetitive surge peak on-state current  
ITSM  
I2t  
(Single cycle, T initial = 25°C)  
J
F= 60Hz  
10  
A
tp = 10 ms  
tp = 8.3 ms  
F = 50 Hz  
F = 60 Hz  
0.32  
0.41  
A2s  
A2s  
I2t Value for fusing  
TO-92  
SOT-89  
SOT-223  
di/dt  
Critical rate of rise of on-state current I( = 10mA  
T = 125°C  
50  
A/μs  
J
I(.  
1FBLꢁ(BUFꢁ$VSSFOU  
tp = 10 ꢀs  
T = 125°C  
1.0  
A
J
P(ꢂ"7ꢃ  
Tstg  
Average gate power dissipation  
Storage junction temperature range  
Operating junction temperature range  
T = 125°C  
0.1  
W
J
-40 to 150  
-40 to 125  
°C  
T
J
www.littelfuse.com  
©2008 Littelfuse  
145  
Power Thyristor Databook  
SxX8xSx EV Series 0.8A Sensitive SCR  

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