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S8X8BS1RP

更新时间： 2024-11-01 15:50:27
品牌 Logo 应用领域
力特 - LITTELFUSE 栅栅极
页数 文件大小 规格书
10页 1415K
描述
Silicon Controlled Rectifier, 0.8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3

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S8X8BS1RP 技术参数

生命周期：Active零件包装代码：SOT-89
包装说明：SMALL OUTLINE, R-PSSO-F3针数：3
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.62其他特性：UL RECOGNIZED, SENSITIVE GATE
配置：SINGLE最大直流栅极触发电流：0.005 mA
JESD-30 代码：R-PSSO-F3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE认证状态：Not Qualified
最大均方根通态电流：0.8 A断态重复峰值电压：800 V
重复峰值反向电压：800 V表面贴装：YES
端子面层：MATTE TIN端子形式：FLAT
端子位置：SINGLE触发设备类型：SCR
Base Number Matches：1

S8X8BS1RP 数据手册

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Teccor® brand Thyristors  
EV Series 0.8 Amp Sensitive SCRs  
HF  
SxX8xSx Series  
Description  
New device series offers high static dv/dt and lower turn  
off (tq) sensitive SCR with its small die planar construction  
design. It is specifically designed for GFCI (Ground Fault  
Circuit Interrupter) and Gas Ignition applications. All  
SCRs junctions are glass-passivated to ensure long term  
reliability and parametric stability.  
Features  
• RoHS compliant and  
• High dv/dt noise immunity  
Halogen-Free  
• Improved turn-off time (tq)  
• Thru-hole and surface  
< 25 μsec  
mount packages  
• Sensitive gate for direct  
• Surge current  
microprocessor interface  
Main Features  
capability > 10Amps  
Symbol  
Value  
0.8  
Unit  
A
• Blocking voltage  
( VDRM / VRRM  
)
IT(RMS)  
VDRM / VRRM  
IGT  
capability - up to 800V  
400 to 800  
5 to 200  
V
μA  
Schematic Symbol  
A
Applications  
The SxX8xSx EV series is specifically designed for  
GFCI (Ground Fault Circuit Interrupter) and gas ignition  
applications.  
G
K
Absolute Maximum Ratings  
Symbol  
Parameter  
Value  
Unit  
TO-92  
SOT-89  
SOT-223  
TO-92  
TC = 55°C  
TC = 60°C  
TL = 60°C  
TC = 55°C  
TC = 60°C  
TL = 60°C  
F= 50Hz  
F= 60Hz  
F = 50 Hz  
F = 60 Hz  
0.8  
0.8  
A
A
IT(RMS)  
RMS on-state current (full sine wave)  
Average on-state current  
0.8  
A
0.51  
0.51  
0.51  
8
A
IT(AV)  
SOT-89  
SOT-223  
A
A
TO-92  
SOT-89  
SOT-223  
A
Non repetitive surge peak on-state current  
(Single cycle, TJ initial = 25°C)  
ITSM  
I2t  
10  
A
tp = 10 ms  
tp = 8.3 ms  
0.32  
0.41  
A2s  
A2s  
I2t Value for fusing  
TO-92  
SOT-89  
SOT-223  
di/dt  
Critical rate of rise of on-state current IG = 10mA  
TJ = 125°C  
50  
A/µs  
IGM  
Peak Gate Current  
tp = 10 μs  
TJ = 125°C  
TJ = 125°C  
—
1.0  
A
PG(AV)  
Tstg  
TJ  
Average gate power dissipation  
Storage junction temperature range  
Operating junction temperature range  
—
—
—
0.1  
W
°C  
°C  
-40 to 150  
-40 to 125  
—
SxX8xSx Series  
©2011 Littelfuse, Inc  
Specifications are subject to change without notice.  
173  
Revised: June 15, 2011 01:18 PM  
Please refer to http://www.littelfuse.com for current information.  
1234567...10

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与S8X8BS1RP相关器件

型号 品牌 获取价格 描述 数据表
S8X8BS1RP1 LITTELFUSE

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 		Silicon Controlled Rectifier, 0.8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, HALOGEN F
S8X8BS2 LITTELFUSE

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 		Silicon Controlled Rectifier, 0.8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, HALOGEN F
S8X8BS2RP LITTELFUSE

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 		Silicon Controlled Rectifier, 0.8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, HALOGEN F
S8X8BS2RP1 LITTELFUSE

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 		Silicon Controlled Rectifier, 0.8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, HALOGEN F
S8X8BSRP LITTELFUSE

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 		Silicon Controlled Rectifier, 0.8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, HALOGEN F
S8X8BSRP1 LITTELFUSE

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 		Silicon Controlled Rectifier, 0.8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, HALOGEN F
S8X8ES LITTELFUSE

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 		EV Series 0.8A Sensitive SCR
S8X8ES1 LITTELFUSE

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 		EV Series 0.8A Sensitive SCR
S8X8ES1AP LITTELFUSE

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 		Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 800V V(DRM), 800V V(RRM), 1 Elemen
S8X8ES1RP LITTELFUSE

获取价格

 		Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 800V V(DRM), 800V V(RRM), 1 Elemen

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