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S8X5ECSAP

更新时间： 2024-11-02 14:57:03
品牌 Logo 应用领域
力特 - LITTELFUSE 过载保护断路器装置
页数 文件大小 规格书
6页 884K
描述
S8X5ECS提供高静态dv/dt和较低断开时间(tq)。 它专为GFCI（接地故障断路器）和AFCI（电弧故障断路器）、RCD（剩余电流装置）和RCBO (带过载保护的剩余电流断路器）应用设计。

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中文翻译

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S8X5ECSAP 数据手册

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Thyristors  
EV Series 0.8 Amp Sensitive SCRs  
RoHS  
S8X5ECSx  
Description  
The S8X5ECSx offers a high static dv/dt with a low turn off  
(tq) time. It is specifically designed for GFCI (Ground Fault  
Circuit Interrupter) and AFCI (Arc Fault Circuit Interrupter),  
RCD (Residual Current Device) and RCBO (Residual Current  
Circuit Breaker with Overload Protection) applications. All  
SCR junctions are glass-passivated to ensure long term  
reliability and parametric stability.  
Main Features  
Features  
•Thru-hole packages  
• Non-repetitive reverse  
surge peak off-state  
voltage (VRSM) up to 900V  
Symbol  
Value  
Unit  
• Surge current  
capability < 20Amps  
IT(RMS)  
0.5  
800  
A
V
V
DRM / VRRM  
• High dv/dt noise immunity  
• Improved turn-off time (tq)  
• Blocking voltage  
V
DSM (tp = 50 μs)  
1150  
V
( VDRM / VRRM  
)
V
RSM (tp = 50 μs)  
IGT  
900  
V
capability - up to 800V  
• Sensitive gate for direct  
microprocessor interface  
• Halogen free and RoHS  
compliant  
20 to 100  
μA  
• Non-repetitive direct  
surge peak off-state  
voltage (VDSM) up to 1150V  
Schematic Symbol  
A
G
* TO92 with "GAK" pin output  
K
Absolute Maximum Ratings  
Symbol  
Parameter  
Value  
0.5  
Unit  
A
IT(RMS)  
IT(AV)  
RMS on-state current (full sine wave)  
TC = 85°C  
TC = 85°C  
F= 50Hz  
F= 60Hz  
Average on-state current  
0.3  
A
10  
A
Non repetitive surge peak on-state current  
(Sine half wave, TJ initial = 25°C)  
ITSM  
12  
A
I2t  
di/dt  
IGM  
I2t Value for fusing  
tp = 10 ms  
F = 50 Hz  
TJ = 125°C  
TJ = 125°C  
TJ = 125°C  
—
0.5  
A2s  
A/µs  
A
Critical rate of rise of on-state current IG = 10mA  
Peak Gate Current  
80  
tp = 20 μs  
0.5  
PG(AV)  
Tstg  
TJ  
Average gate power dissipation  
Storage junction temperature range  
Operating junction temperature range  
—
—
—
0.2  
W
°C  
°C  
-40 to 150  
-40 to 125  
—
© 2023 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: TK.02/28/23  
123456

中文翻译

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与S8X5ECSAP相关器件

型号 品牌 获取价格 描述 数据表
S8X5ECSRP LITTELFUSE

获取价格

 		S8X5ECS提供高静态dv/dt和较低断开时间(tq)。 它专为GFCI（接地故障断路器
S8X8BS LITTELFUSE

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 		Silicon Controlled Rectifier, 0.8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, HALOGEN F
S8X8BS1 LITTELFUSE

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 		Silicon Controlled Rectifier, 0.8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, HALOGEN F
S8X8BS1RP LITTELFUSE

获取价格

 		Silicon Controlled Rectifier, 0.8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, HALOGEN F
S8X8BS1RP1 LITTELFUSE

获取价格

 		Silicon Controlled Rectifier, 0.8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, HALOGEN F
S8X8BS2 LITTELFUSE

获取价格

 		Silicon Controlled Rectifier, 0.8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, HALOGEN F
S8X8BS2RP LITTELFUSE

获取价格

 		Silicon Controlled Rectifier, 0.8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, HALOGEN F
S8X8BS2RP1 LITTELFUSE

获取价格

 		Silicon Controlled Rectifier, 0.8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, HALOGEN F
S8X8BSRP LITTELFUSE

获取价格

 		Silicon Controlled Rectifier, 0.8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, HALOGEN F
S8X8BSRP1 LITTELFUSE

获取价格

 		Silicon Controlled Rectifier, 0.8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, HALOGEN F

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