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S860T

更新时间: 2024-01-12 08:37:22
品牌 Logo 应用领域
威世 - VISHAY 放大器集成电源管理电路
页数 文件大小 规格书
5页 70K
描述
BIPMIC - Cascadable Silicon Bipolar Amplifier

S860T 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.72特性阻抗:50 Ω
构造:COMPONENT增益:5 dB
最大输入功率 (CW):最大工作频率:1900 MHz
最小工作频率:900 MHz射频/微波设备类型:WIDE BAND LOW POWER
Base Number Matches:1

S860T 数据手册

 浏览型号S860T的Datasheet PDF文件第2页浏览型号S860T的Datasheet PDF文件第3页浏览型号S860T的Datasheet PDF文件第4页浏览型号S860T的Datasheet PDF文件第5页 
S860T  
Vishay Telefunken  
BIPMIC – Cascadable Silicon Bipolar Amplifier  
Electrostatic sensitive device.  
Observe precautions for handling.  
Applications  
General purpose for narrow and broad band IF and RF plifiers with minimal external circuitry, thus providing a  
amplifiers in commercial and industrial applications simple, cost effective way to achieve low level amplifi-  
with low power consumption. This allows to build am- cation, for example in cordless phones.  
Features  
Broadband amplification  
Low operating voltage (3 V)  
Low operating current  
High gain (8.5 dB @900 MHz and 50  
)
Low cost surface mount plastic package  
Few external components  
2
1
13 579  
94 9279  
3
4
S860T Marking: 860  
Plastic case (SOT 143)  
1 = RF-output, 2 = Ground,  
3 = RF-input, 4 = Ground  
Typical biasing configuration  
Absolute Maximum Ratings  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Device current  
RF input power  
Total power dissipation  
Junction temperature  
Storage temperature range  
Test Conditions  
Symbol  
Value  
4
0
8
Unit  
mA  
dBm  
mW  
C
I
bias  
P
in  
T
amb  
146 C  
P
tot  
T
150  
–65 to +150  
j
T
stg  
C
Maximum Thermal Resistance  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Test Conditions  
Symbol  
R
thJA  
Value  
450  
Unit  
K/W  
3
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm  
plated with 35 m Cu  
Document Number 85055  
Rev. 3, 20-Jan-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (5)  

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