Datasheet > S8550

S8550

更新时间： 2024-11-05 22:22:35

品牌	Logo	应用领域
永盛 - Wing Shing		晶体晶体管
页数	文件大小	规格书
1页	102K
描述
TRANSISTOR (PNP)

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中文翻译

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数据手册

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S8550 数据手册

TRANSISTOR (PNP)

S8550

TO-92

FEATURES

Power dissipation

P_CM: 0.625 W（Tamb=25℃）

Collector current

1. EMITTER

2. BASE

I_CM: 0.5

3. COLLECTOR

Collector-base voltage

V_(BR)CBO: 40

1 2 3

ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)_CBO

Ic= 100μA , I_E=0

Collector-emitter breakdown voltage V(BR)_CEO

Ic= 0.1 mA， I_B=0

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V(BR)_EBO

I_CBO

I_E= 100μA， I_C=0

V_CB= 40 V ,

I_E=0

I_B=0

0.1

μA

I_CEO

V_CE= 20 V ,

V =

0.2

0.1

I_EBO

V， I_C=0

H_FE（1）

H_FE（2）

V_CE(sat)

V_BE(sat)

V_BE

V_CE=-1 V, I_C= 50mA

300

DC current gain(note)

V_CE=-1 V, I_C= 500mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

I_C= 500mA, I_B= 50 mA

0.6

1.2

1.4

I_C=-500mA, I_B= 50 mA

I_E=-100mA

V_CE= 6 V, I_C=-20mA

Transition frequency

150

MHz

f_T

f = 30MHz

CLASSIFICATION OF H_FE(1)

Rank

Range

85-160

120-200

160-300

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

中文翻译

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