Datasheet > S8550

S8550

更新时间： 2024-01-10 15:00:40

品牌	Logo	应用领域
DAYA		晶体晶体管
页数	文件大小	规格书
2页	193K
描述
TO-92 Plastic-Encapsulate Transistors

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技术参数
数据手册

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S8550 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

S8550 数据手册

SOT-23 Plastic-Encapsulate Transistors

SOT-23

S8550 TRANSISTOR (PNP)

1. BASE

FEATURES

2. EMITTER

3. COLLECTOR

Complimentary to S8050

Collector current: I_C=0.5A

MARKING : 2TY

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Value

-40

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

-25

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-0.5

0.3

P_C

℃

T_j

150

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= -100μA, I_E=0

I_C=-1mA, I_B=0

MIN

-40

-25

-5

MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E= -100μA, I_C=0

V_CB= -40V, I_E=0

-0.1

400

μA

Collector cut-off current

I_CEO

V_CE= -20V, I_B=0

Emitter cut-off current

I_EBO

V_EB= -3V, I_C=0

h_FE(1)

V_CE= -1V, I_C= -50mA

V_CE= -1V, I_C= -500mA

I_C=-500mA, I_B= -50mA

120

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

-0.6

-1.2

V_CE= -6V, I_C= -20mA

f=30MHz

Transition frequency

150

MHz

f_T

CLASSIFICATION OF h_FE(1)

Rank

120-200

200-350

Range

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