S8305MG
TECHNICAL DATA
Infrared Laser Diode
Features
•
•
•
•
Lasing Mode Structure: multi mode
Peak Wavelength : typ. 830 nm
Optical Ouput Power: 5 mW
Package: 5.6 mm
Electrical Connection
Pin Configuration
Bottom View
n-type
PIN
Function
1
2
3
LD Cathode
LD Anode, PD Cathode
PD Anode
Absolute Maximum Ratings (TC=25°C)
Item
Symbol
Value
Unit
CW Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Case Temperature
Storage Temperature
PO
VrLD
VrPD
TC
5
2
30
mW
V
V
°C
°C
-10 … +40
-10 … +85
Tstg
Specifications (TC=25°C, PO=5mW)
Item
Optical Specifications
Center Wavelength
Symbol
Min.
Typ.
Max.
Unit
λC
θ║
θ┴
820
4
27
830
6
31
840
9
33
nm
deg
deg
FWHM Beam Divergence*
Electrical Specifications
Threshold Current
Operating Current
Slope Efficiency
Operating Voltage
Monitor Current
Ith
Iop
η
Uop
Im
-
-
12
21
0.6
1.9
0.1
18
25
1
2.5
0.15
mA
mA
mW/mA
V
0.3
-
0.05
mA
* θ║ and θ┴ are defined as the angle within the intensity is 50% of the peak value.
The above specifications are for reference purpose only and subjected to change without prior notice.
04.10.2011
S8305MG
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