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S8305MG PDF预览

S8305MG

更新时间: 2022-04-21 14:51:17
品牌 Logo 应用领域
ROITHNER 二极管激光二极管
页数 文件大小 规格书
5页 384K
描述
Infrared Laser Diode

S8305MG 数据手册

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S8305MG  
TECHNICAL DATA  
Infrared Laser Diode  
Features  
Lasing Mode Structure: multi mode  
Peak Wavelength : typ. 830 nm  
Optical Ouput Power: 5 mW  
Package: 5.6 mm  
Electrical Connection  
Pin Configuration  
Bottom View  
n-type  
PIN  
Function  
1
2
3
LD Cathode  
LD Anode, PD Cathode  
PD Anode  
Absolute Maximum Ratings (TC=25°C)  
Item  
Symbol  
Value  
Unit  
CW Output Power  
LD Reverse Voltage  
PD Reverse Voltage  
Operating Case Temperature  
Storage Temperature  
PO  
VrLD  
VrPD  
TC  
5
2
30  
mW  
V
V
°C  
°C  
-10 … +40  
-10 … +85  
Tstg  
Specifications (TC=25°C, PO=5mW)  
Item  
Optical Specifications  
Center Wavelength  
Symbol  
Min.  
Typ.  
Max.  
Unit  
λC  
θ║  
θ┴  
820  
4
27  
830  
6
31  
840  
9
33  
nm  
deg  
deg  
FWHM Beam Divergence*  
Electrical Specifications  
Threshold Current  
Operating Current  
Slope Efficiency  
Operating Voltage  
Monitor Current  
Ith  
Iop  
η
Uop  
Im  
-
-
12  
21  
0.6  
1.9  
0.1  
18  
25  
1
2.5  
0.15  
mA  
mA  
mW/mA  
V
0.3  
-
0.05  
mA  
* θand θare defined as the angle within the intensity is 50% of the peak value.  
The above specifications are for reference purpose only and subjected to change without prior notice.  
04.10.2011  
S8305MG  
1 of 5  

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