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S8050D-G PDF预览

S8050D-G

更新时间: 2024-11-25 20:02:07
品牌 Logo 应用领域
WEITRON /
页数 文件大小 规格书
4页 3507K
描述
Transistor

S8050D-G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.61最大集电极电流 (IC):0.5 A
配置:Single最小直流电流增益 (hFE):160
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.625 W子类别:Other Transistors
表面贴装:NO标称过渡频率 (fT):150 MHz
Base Number Matches:1

S8050D-G 数据手册

 浏览型号S8050D-G的Datasheet PDF文件第2页浏览型号S8050D-G的Datasheet PDF文件第3页浏览型号S8050D-G的Datasheet PDF文件第4页 
S8050  
NPN General Purpose Transistors  
* “G” Lead(Pb)-Free  
TO-92  
1. EMITTER  
2. BASE  
3. COLLECTOR  
1
2
3
ABSOLUTE MAXIMUM RATINGS  
(Ta=25 C)  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base VOltage  
Collector Current  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
mAdc  
Value  
25  
40  
5.0  
500  
V
CEO  
V
V
CBO  
EBO  
I
C
P
D
0.625  
150  
Total Device Dissipation T =25 C  
W
C
A
Junction Temperature  
Storage, Temperature  
T
j
Tstg  
C
-55 to +150  
ELECTRICAL CHARACTERISTICS  
Characteristics  
Symbol  
Min  
Max  
Unit  
-
Collector-Emitter Breakdown Voltage (I = 0.1 mAdc, I =0)  
V
25  
Vdc  
C
B
(BR)CEO  
-
-
40  
Vdc  
Collector-Base Breakdown Voltage (I = 100 µAdc, I =0)  
V
V
C
E
(BR)CBO  
Vdc  
5.0  
Emitter-Base Breakdown Voltage (I = 100 µAdc, I =0)  
(BR)EBO  
E
C
uAdc  
I
I
CE0  
0.1  
0.1  
0.1  
Collector Cutoff Current (V = 20 Vdc, I =0)  
-
-
CE  
B
uAdc  
uAdc  
Collector Cutoff Current (V = 40 Vdc, I =0)  
CB  
CBO  
EBO  
E
-
I
d
Emitter Cutoff Current (V = 3.0V c, I =0)  
EB  
C
WEITRON  
http://www.weitron.com.tw  

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