Datasheet > S8050-HQ

S8050-HQ

更新时间： 2024-04-09 18:58:47

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
4页	281K
描述
SOT-23

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数据手册

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S8050-HQ 数据手册

RoHS

COMPLIANT

S8050-LQ THRU S8050-HQ

NPN General Purpose Amplifier

Features

● Epoxy meets UL-94 V-0 flammability rating and halogen free

● Moisture Sensitivity Level 1

● Part no. with suffix “Q” means AEC-Q101 qualified

Applications

● Linear amplification

Mechanical Data

● Case: SOT-23

● Terminals: Tin plated leads, solderable per J-STD-002

and JESD22-B102

● Marking:

S8050-LQ

J3YꞏL

S8050-HQ J3Y

Maximum Ratings (Ta=25℃unless otherwise noted)

■

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

Unit

Conditions

Value

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Total Device Dissipation

Maximum Junction Temperature

Storage Temperature

℃

500

P_D

300

T_j

150

T_STG

-55 to +150

℃

Electrical Characteristics (Ta=25℃unless otherwise noted)

■

Item

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Unit

Conditions

Min

Max

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=100μA,I_E=0

I_C=100μA,I_B=0

I_E=100μA,I_C=0

V_CB=40V, I_E=0

100

350

Collector cut-off current

I_CEO

V_CE=20V, I_B=0

Emitter cut-off current

I_EBO

V_EB=5V, I_C=0

h_FE(1)

V_CE=1.0V,I_C=50mA

V_CE=1.0V,I_C=500mA

I_C=500mA,I_B=50mA

120

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

0.6

1.2

1 / 4

S-S2251

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.1,18-Apr-20

12 3 4

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S8050LT1H	MCC	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC	获取价格