Datasheet > S8050

S8050

更新时间： 2024-09-26 17:01:15

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
5页	1159K
描述
三极管

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中文翻译

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数据手册

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S8050 数据手册

S8050

GOOD-ARK Electronics

SOT-23 Plastic-Encapsulate Transistors

Features

● Complementary to S8550.

RoHS

● 300mW; Power Dissipation of 300mW

● High Stability and High Reliability

COMPLIANT

Mechanical Data

Marking:

J3Y

SOT-23

● SOT-23 Small Outline Plastic Package

● Epoxy UL: 94V-0

Pin definition

● Mounting Position: Any

Maximum Ratings & Electrical Characteristics(TA=25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter -Base Voltage

500

Collector Current-Continuous

Collector Power Dissipation

Operating junction temperature range

Storage temperature range

Thermal Resistance from Junction to Ambient

300

150

°C

P_C

-55-+150

417

°C

T_STG

RθJA

℃/W

Electrical Specifications(TA=25℃ unless otherwise noted)

Limits

Parameter

Symbol

Test Conditions

Unit

Min

Max

V(BR)CBO

V(BR)CEO

V(BR)EBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

IC=100uA, IE=0

IC=1mA, IB=0

IE=100uA, IC=0

VCE=20V, IB=0

VCB=40V, IE=0

CEO

ICBO

EBO

100

Collector cut-off current

Emitter cut-off current

VEB=5V, IC=0

100

400

FE(1)

FE(2)

VCE=1V, IC=50mA

VCE=1V, IC=500mA

IC=500mA, IB=50mA

VCE=6V, IC=20mA,f=30MHz

120

DC current gain

Collector-emitter saturation voltage

Transition frequency

CE(sat)

BE(sat)

0.60

1.20

MHz

150

Classification OF _hFE(2)

RANK

RANGE

120-200

200-350

300-400

Doc.No.643141

www.goodark.com

12 3 4 5

中文翻译

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