Datasheet > S8050

S8050

更新时间： 2024-09-16 14:55:03

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	885K
描述
SOT-23

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中文翻译

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技术参数
数据手册

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S8050 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.52
Base Number Matches：	1

S8050 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

S8050 ^{TRANSISTOR (NPN)}

SOT-23

FEATURES

Complimentary to S8550

Collector Current: I_C=0.5A

1. BASE

2. EMITTER

3. COLLECTOR

MARKING: J3Y

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

500

300

417

℃/W

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

P_C

R_ΘJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= 100μA, I_E=0

I_C=1mA, I_B=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=100μA, I_C=0

V_CB=40 V , I_E=0

0.1

400

μA

Collector cut-off current

I_CEO

_VCE=20V , I _B=0

V_EB= 5V , I_C=0

Emitter cut-off current

I_EBO

120

h_FE(1)

V_CE=1V, I _C= 50mA

V_CE=1V, I _C= 500mA

IC=500 mA, I_B= 50mA

I_C=500 mA, I_B= 50mA

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

0.6

1.2

_CE=6V, I _C= 20mA

Transition frequency

f_T

150

MHz

f=30MHz

CLASSIFICATION OF hFE

(1)

Rank

120-200

200-350

300-400

Range

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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