S8050

更新时间： 2024-09-15 12:56:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体晶体管光电二极管
页数	文件大小	规格书
4页	1050K
描述
TO-92 Plastic-Encapsulate Transistors

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中文翻译

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技术参数
数据手册

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S8050 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.52
Base Number Matches：	1

S8050 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

TO-92

S8050 TRANSISTOR (NPN)

FEATURES

1.EMITTER

2.BASE

Complimentary to S8550

Collector current: I_C=0.5A

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

3.COLLECTOR

Symbol

Parameter

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

0.5

P_C

0.625

150

T_J

℃

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 100μA, I_E=0

I_C= 0.1mA, I_B=0

I_E= 100μA, I_C=0

V_CB= 40 V , I_E=0

V_CE= 20 V , I_B=0

V_EB= 5V, I_C=0

0.1

400

μA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

h_FE(1)

V_CE= 1V, I_C= 50mA

V_CE= 1V, I_C= 500mA

I_C=500mA, I_B=50mA

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

0.6

1.2

V_CE= 6V, I_C=20mA

f =30MHz

Transition frequency

f_T

150

MHz

CLASSIFICATION OF h_FE(1)

Rank

300-400

Range

85-160

120-200

160-300

www.cj-elec.com

C,Jan,2015

12 3 4

中文翻译

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