Datasheet > S8050

S8050

更新时间： 2024-11-05 12:20:19

品牌	Logo	应用领域
SECOS		晶体晶体管光电二极管
页数	文件大小	规格书
2页	198K
描述
Plastic-Encapsulate Transistors

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中文翻译

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技术参数
数据手册

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S8050 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.55	Base Number Matches：	1

S8050 数据手册

S8050

NPN Silicon

Elektronische Bauelemente

Plastic-Encapsulate Transistors

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

SOT-23

Min

FEATURES

Dim

Max

Collector

2.800 3.040

1.200 1.400

0.890 1.110

0.370 0.500

1.780 2.040

0.013 0.100

0.085 0.177

0.450 0.600

0.890 1.020

2.100 2.500

0.450 0.600

Complimentary to S8550

Base

Collector Current: IC=0.5A

Emitter

Top View

MARKING: J3Y

All Dimension in mm

MAXIMUM RATINGS (T_A=25 Cunless otherwise noted)

Symbol

V_CBO

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Dissipation

0.5

P_C

0.3

℃

T_j

Junction Temperature

Storage Temperature

150

-55-150

T_stg

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 100μA, I_E=0

I_C=1mA, I_B=0

I_E=100μA, I_C=0

V_CB=40 V , I_E=0

V_CB=20V , I_E=0

V_EB= 5V , I_C=0

V_CE=1V, I_C= 50mA

V_CE=1V, I_C= 500mA

I_C=500 mA, I_B= 50mA

0.1

350

μA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

H_FE(1)

120

DC current gain

H_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

0.6

1.2

_CE=6V, I_C= 20mA

Transition frequency

f_T

150

MHz

f=30MHz

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2007 Rev. A

Page 1 of 2

中文翻译

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