Datasheet > S8050

S8050

更新时间： 2024-09-15 08:55:51

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管光电二极管
页数	文件大小	规格书
2页	468K
描述
TRANSISTOR(NPN)

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中文翻译

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数据手册

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S8050 数据手册

S8050

TRANSISTOR(NPN)

SOT-23

FEATURES

Complimentary to S8550

Collector Current: I_C=0.5A

1. BASE

2. EMITTER

3. COLLECTOR

MARKING: J3Y

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Dissipation

0.5

P_C

0.3

℃

T_j

Junction Temperature

Storage Temperature

150

-55-150

T_stg

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 100μA, I_E=0

I_C=1mA, I_B=0

I_E=100μA, I_C=0

V_CB=40 V , I_E=0

V_CB=20V , I_E=0

V_EB= 5V , I_C=0

V_CE=1V, I_C= 50mA

V_CE=1V, I_C= 500mA

I_C=500 mA, I_B= 50mA

0.1

350

μA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

H_FE(1)

120

DC current gain

H_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

0.6

1.2

_CE=6V, I_C= 20mA

Transition frequency

f_T

150

MHz

f=30MHz

CLASSIFICATION OF h_FE(1)

Rank

120-200

200-350

Range

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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