Datasheet > S8050

S8050

更新时间： 2024-09-15 08:55:51

品牌	Logo	应用领域
TGS		晶体晶体管光电二极管
页数	文件大小	规格书
2页	232K
描述
SOT-23 Plastic-Encapsulate Transistors (NPN)

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S8050 数据手册

TIGER ELECTRONIC CO.,LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

S8050 TRANSI STOR (NPN)

FEATURES

1. BASE

Complimentary to S8550

Collector Current: I_C=0.5A

2. EMITTER

3. COLLECTOR

MARKING: J3Y

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Dissipation

0.5

P_C

0.3

℃

T_j

Junction Temperature

Storage Temperature

150

-55-150

T_stg

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= 100μA, I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=1mA, I_B=0

I_E=100μA, I_C=0

V_CB=40 V , I_E=0

0.1

350

μA

Collector cut-off current

I_CEO

V_CB=20V , I _E=0

Emitter cut-off current

I_EBO

V_EB= 5V , I_C=0

H_FE(1)

V_CE=1V, I _C= 50mA

V_CE=1V, I _C= 500mA

I=500 mA, I_B= 50mA

I_C=500 mA, I_B= 50mA

120

DC current gain

H_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

0.6

1.2

_CE=6V, I _C= 20mA

Transition frequency

f_T

150

MHz

f=30MHz

CLASSIFICATION OF h_FE(1)

Rank

120-200

200-350

Range

B,Dec,2011

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