Datasheet > S8050

S8050

更新时间： 2024-09-15 04:06:39

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管光电二极管
页数	文件大小	规格书
2页	75K
描述
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR

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S8050 数据手册

UTC S8050

NPN EPITAXIAL SILICON TRANSISTOR

LOW VOLTAGE HIGH CURRENT

SMALL SIGNAL NPN

TRANSISTOR

DESCRIPTION

The UTC S8050 is a low voltage high current small

signal NPN transistor, designed for Class B push-pull

audio amplifier and general purpose applications.

FEATURES

*Collector current up to 700mA

*Collector-Emitter voltage up to 20 V

*Complementary to S8550

TO-92

1:EMITTER 2:BASE 3: COLLECTOR

ABSOLUTE MAXIMUM RATINGS ^{(Ta=25°C, unless otherwise specified )}

PARAMETER

Collector-Base Voltage

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

°C

700

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Dissipation(Ta=25°C)

Collector Current

Junction Temperature

Storage Temperature

TSTG

150

-65 ~ +150

ELECTRICAL CHARACTERISTICS ^{(Ta=25°C, unless otherwise specified)}

PARAMETER

SYMBOL

BVCBO

BVCEO

BVEBO

ICBO

TEST CONDITIONS

Ic=100µA,IE=0

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Ic=1mA,IB=0

IE=100µA,Ic=0

VCB=30V,IE=0

VEB=5V,Ic=0

µA

100

Emitter Cut-Off Current

IEBO

DC Current Gain(note)

hFE1

VCE=1V,Ic=1mA

VCE=1V,Ic=150 mA

VCE=1V,Ic=500mA

Ic=500mA,IB=50mA

VCE=1V,Ic=10mA

VCE=10V,Ic=50mA

VCB=10V,IE=0

100

120

hFE2

hFE3

VCE(sat)

VBE(sat)

VBE

110

9.0

400

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

0.5

1.2

1.0

MHz

Cob

100

f=1MHz

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R201-013,A

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