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S72WS256ND0BFW930 PDF预览

S72WS256ND0BFW930

更新时间: 2024-11-27 14:18:27
品牌 Logo 应用领域
飞索 - SPANSION 动态存储器内存集成电路
页数 文件大小 规格书
28页 1252K
描述
Memory Circuit, 16MX16, CMOS, PBGA137, 9 X 12 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-137

S72WS256ND0BFW930 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:9 X 12 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-137
针数:137Reach Compliance Code:unknown
HTS代码:8542.32.00.71风险等级:5.84
其他特性:MOBILE SDRAM IS ORGANIZED AS 2M X 16BIT X 4 BANKS; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLEJESD-30 代码:R-PBGA-B137
JESD-609代码:e1长度:12 mm
内存密度:268435456 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:137
字数:16777216 words字数代码:16000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:16MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
宽度:9 mmBase Number Matches:1

S72WS256ND0BFW930 数据手册

 浏览型号S72WS256ND0BFW930的Datasheet PDF文件第2页浏览型号S72WS256ND0BFW930的Datasheet PDF文件第3页浏览型号S72WS256ND0BFW930的Datasheet PDF文件第4页浏览型号S72WS256ND0BFW930的Datasheet PDF文件第5页浏览型号S72WS256ND0BFW930的Datasheet PDF文件第6页浏览型号S72WS256ND0BFW930的Datasheet PDF文件第7页 
S72WS-N Based MCP/PoP Products  
1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus  
256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory  
512 Mb NAND Flash  
1024 Mb NAND Interface ORNAND Flash Memory on Bus 1  
512/256/128 Mb (8M/4M/2M x 16-bit x 4 Banks) Mobile SDRAM on  
Bus 2  
S72WS-N Based MCP/PoP Products Cover Sheet  
Data Sheet (Advance Information)  
Notice to Readers: This document states the current technical specifications regarding the Spansion  
product(s) described herein. Each product described herein may be designated as Advance Information,  
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.  
Publication Number S72WS-N_00  
Revision A  
Amendment 9  
Issue Date May 8, 2007  

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