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S72NS512RE0AHGGC3 PDF预览

S72NS512RE0AHGGC3

更新时间: 2024-11-27 14:44:35
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 动态存储器内存集成电路
页数 文件大小 规格书
12页 528K
描述
Memory Circuit, Flash+SDRAM, 32MX16, CMOS, PBGA133,

S72NS512RE0AHGGC3 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:FBGA, BGA133,14X14,20Reach Compliance Code:compliant
风险等级:5.29Is Samacsys:N
JESD-30 代码:S-PBGA-B133内存密度:536870912 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:16
混合内存类型:FLASH+SDRAM端子数量:133
字数:33554432 words字数代码:32000000
最高工作温度:85 °C最低工作温度:-25 °C
组织:32MX16封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA133,14X14,20
封装形状:SQUARE封装形式:GRID ARRAY, FINE PITCH
电源:1.8 V认证状态:Not Qualified
子类别:Other Memory ICs标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:BALL
端子节距:0.5 mm端子位置:BOTTOM
Base Number Matches:1

S72NS512RE0AHGGC3 数据手册

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S72NS-R Based MCPs  
MirrorBit® Flash Memory and DRAM  
128/256/512 Mb (8/16/32 M x 16 bit), 1.8 Volt-only, Multiplexed  
Simultaneous Read/Write, Burst Mode Flash Memory  
128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus  
S72NS-R Based MCPs Cover Sheet  
Data Sheet (Advance Information)  
Notice to Readers: This document states the current technical specifications regarding the Spansion  
product(s) described herein. Each product described herein may be designated as Advance Information,  
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.  
Publication Number S72NS-R_00  
Revision 03  
Issue Date January 15, 2008  

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