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S70GL02GS11FHA010 PDF预览

S70GL02GS11FHA010

更新时间: 2024-11-28 11:10:11
品牌 Logo 应用领域
英飞凌 - INFINEON 内存集成电路
页数 文件大小 规格书
24页 304K
描述
High Performance Page Mode

S70GL02GS11FHA010 数据手册

 浏览型号S70GL02GS11FHA010的Datasheet PDF文件第2页浏览型号S70GL02GS11FHA010的Datasheet PDF文件第3页浏览型号S70GL02GS11FHA010的Datasheet PDF文件第4页浏览型号S70GL02GS11FHA010的Datasheet PDF文件第5页浏览型号S70GL02GS11FHA010的Datasheet PDF文件第6页浏览型号S70GL02GS11FHA010的Datasheet PDF文件第7页 
S70GL02GS  
2 Gbit (256 MB) GL-T MIRRORBIT™ Flash  
Parallel, 3.0 V  
General description  
The S70GL02GS 2-Gb MIRRORBIT™ flash memory device is fabricated on 65-nm MIRRORBIT™ process technology.  
This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features  
a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in  
faster effective programming time than standard single byte/word programming algorithms. This makes the  
device an ideal product for today’s embedded applications that require higher density, better performance and  
lower power consumption.  
This document contains information for the S70GL02GS device, which is a dual die stack of two S29GL01GS die.  
For detailed specifications, please refer to the discrete die datasheet.  
Document  
Document number  
S29GL01GS datasheet  
001-98285  
Distinctive characteristics  
• CMOS 3.0 V core with Versatile I/O™  
• Two 1024 Megabit (S29GL01GS) in a single 64-ball Fortified-BGA package (see S29GL01GS datasheet for full  
specifications)  
• 65-nm MIRRORBIT™ process technology  
• Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)  
• Versatile I/O feature  
- Wide I/O voltage (VIO): 1.65 V to VCC  
• ×16 data bus  
• 16-word/32-byte page read buffer  
• 512-byte programming buffer  
- Programming in page multiples, up to a maximum of 512 bytes  
• Sector erase  
- Uniform 128-KB sectors  
- S70GL02GS: two thousand forty-eight sectors  
• Suspend and Resume commands for Program and Erase operations  
• Status Register, data polling, and Ready/Busy pin methods to determine device status  
• Advanced sector protection (ASP)  
- Volatile and non-volatile protection methods for each sector  
• Separate 1024-bye one time program (OTP) array with two lockable regions  
- Available in each device Support for common flash interface (CFI)  
• WP# input  
- Protects first or last sector, or first and last sectors of each device, regardless of sector protection settings  
Datasheet  
www.infineon.com  
Please read the Important Notice and Warnings at the end of this document  
page 1  
001-98296 Rev. *K  
2022-09-09  

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