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S70GL01GN00FAI023 PDF预览

S70GL01GN00FAI023

更新时间: 2024-11-20 02:51:51
品牌 Logo 应用领域
飞索 - SPANSION 闪存
页数 文件大小 规格书
83页 1905K
描述
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology

S70GL01GN00FAI023 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-64
针数:64Reach Compliance Code:not_compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.52最长访问时间:110 ns
备用内存宽度:8命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PBGA-B64JESD-609代码:e0
长度:13 mm内存密度:536870912 bit
内存集成电路类型:FLASH内存宽度:16
湿度敏感等级:3功能数量:1
部门数/规模:512端子数量:64
字数:33554432 words字数代码:32000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32MX16
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装等效代码:BGA64,8X8,40封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE页面大小:8/16 words
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.4 mm部门规模:128K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.09 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
切换位:YES类型:NOR TYPE
宽度:11 mmBase Number Matches:1

S70GL01GN00FAI023 数据手册

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S70GL01GN00 MirrorBit™ Flash  
1024 Megabit,  
3.0 Volt-only Page Mode Flash Memory Featuring  
110 nm MirrorBit™ Process Technology  
ADVANCE  
INFORMATION  
Data Sheet  
Notice to Readers: The Advance Information status indicates that this  
document contains information on one or more products under development  
at Spansion LLC. The information is intended to help you evaluate this product.  
Do not design in this product without contacting the factory. Spansion LLC  
reserves the right to change or discontinue work on this proposed product  
without notice.  
Publication Number S70GL01GN00_00 Revision A Amendment 1 Issue Date June 1, 2005  

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