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S70GL01GN00FAF010 PDF预览

S70GL01GN00FAF010

更新时间: 2024-11-20 21:11:47
品牌 Logo 应用领域
飞索 - SPANSION 内存集成电路
页数 文件大小 规格书
83页 1859K
描述
Flash, 32MX16, 110ns, PBGA64, 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-64

S70GL01GN00FAF010 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-64针数:64
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.52
最长访问时间:110 ns备用内存宽度:8
JESD-30 代码:R-PBGA-B64JESD-609代码:e0
长度:13 mm内存密度:536870912 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:64
字数:33554432 words字数代码:32000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32MX16
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.4 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
类型:NOR TYPE宽度:11 mm
Base Number Matches:1

S70GL01GN00FAF010 数据手册

 浏览型号S70GL01GN00FAF010的Datasheet PDF文件第2页浏览型号S70GL01GN00FAF010的Datasheet PDF文件第3页浏览型号S70GL01GN00FAF010的Datasheet PDF文件第4页浏览型号S70GL01GN00FAF010的Datasheet PDF文件第5页浏览型号S70GL01GN00FAF010的Datasheet PDF文件第6页浏览型号S70GL01GN00FAF010的Datasheet PDF文件第7页 
S70GL01GN00 MirrorBit™ Flash  
1024 Megabit,  
3.0 Volt-only Page Mode Flash Memory Featuring  
110 nm MirrorBit™ Process Technology  
Data Sheet  
Notice to Readers: The S70GL01GN has been retired and is not  
recommended for designs. For new and current designs, S29GL01GP  
supersedes S70GL01GN and is the factory-recommended migration path for  
this device. Please refer to the S29GL01GP data sheet for specifications and  
ordering information. Availability of this document is retained for reference  
and historical purposes only.  
Publication Number S70GL01GN00_00 Revision A Amendment 2 Issue Date May 21, 2007  

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