Datasheet > S6189F10VS

S6189F10VS

更新时间： 2024-01-22 00:04:56

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	160K
描述
Rectifier Diode,

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技术参数
数据手册

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S6189F10VS 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.76
Base Number Matches：	1

S6189F10VS 数据手册

S6189F6

thru

S6189F10

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

Part Number/Ordering Information^1/

S6189F

9 Amp

Fast Recovery Rectifier

600 - 1000 Volts

__ __ __

Screening^3/

│

└

│ └

│

__ = Not Screened

TX = TX Level

TXV = TXV

S = S Level

│

Features

│

└

 Fast Recovery: 250 nsec Maximum

 PIV to 1000 Volts

 Low Reverse Leakage Current

 Hermetically Sealed Ministud Packages

 Single Chip Construction

Package

C = Ministud

V = Isolated Ministud

Voltage

6 = 600V

 High Surge Rating

8 = 800V

10 = 1000V

 Low Thermal Resistance

 TX, TXV, and Space Level Screening Available

 Available in Ultrafast and Hyperfast Versions

Maximum Ratings^2/

Symbol

Value

Units

S6189F6C, V

S6189F8C, V

S6189F10C, V

V_RRM

V_RWM

V_R

600

800

1000

Peak Repetitive Reverse Voltage and

DC Blocking Voltage

Volts

Average Rectified Forward Current

I_O

Amps

°C

(Resistive Load, 60 Hz, Sine Wave, T_C≤ 100°C)

Peak Surge Current

(8.3 ms Pulse, Half Sine Wave, T_C≤ 100°C)

I_FSM

125

T_OP& T_STG

-65 to +175

Operating & Storage Temperature

“V” Isolated

“C” Hot Case

7.5

4.5

Maximum Thermal Resistance

(Junction to Case)

R_θJC

°C/W

Notes:

Ministud (C)

Isolated

1/ For ordering information, price, operating curves, and availability - contact factory.

2/ Unless otherwise specified, all electrical characteristics @ 25°C

Ministud (V)

3/ Screening based on MIL-PRF-19500. Screening flows available on request.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: R00017E

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