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S602BS

更新时间: 2024-09-16 13:45:39
品牌 Logo 应用领域
力特 - LITTELFUSE 触发装置可控硅整流器
页数 文件大小 规格书
8页 205K
描述
新推出的1.5安培敏感栅SCR系列采用小型压模平面结构设计,具有高静态dv/dt和较低断开时间(tq)特点。 所有SCR™结点均采用玻璃钝化处理,以确保长期可靠性和参数稳定性。 功能与特色:

S602BS 数据手册

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Teccor® brandThyristors  
Silicon Controlled Rectifiers  
Sx02xS EV Series 1.5 Amp Sensitive SCR  
Description  
New 1.5Amp sensitive gate SCR series offers high static  
dv/dt with low turn off time (tq) through small die planar  
construction design. All SCRs junctions are glass-  
passivated to ensure long term reliability and parametric  
stability.  
Features  
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mount packages  
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time (tq) < 35 ꢀsec.  
capability > 15Amps  
microprocessor interface  
Main Features  
(VDRM / VRRM  
capability — up to 600V  
)
Symbol  
IT(RMS)  
Value  
1.5  
Unit  
A
VDRM / VRRM  
IGT  
400 to 600  
200  
V
Schematic Symbol  
μA  
A
Applications  
The Sx02xS EV series is specifically designed for Gas  
Ignition applications that require high pulse surge current  
capability.  
G
K
Absolute Maximum Ratings  
Symbol  
IT(RMS)  
Parameter  
Value  
Unit  
TO-92  
SOT-223  
TO-92  
TC = 65°C  
TL = 95°C  
TC = 65°C  
TC = 95°C  
RMS on-state current  
(full sine wave)  
1.5  
A
IT(AV)  
Average on-state current  
0.95  
A
A
SOT-223  
F = 50 Hz  
F = 60 Hz  
F = 50 Hz  
F = 60 Hz  
12.5  
15.0  
0.78  
0.93  
Non repetitive surge peak on-state current  
TO-92  
SOT-223  
ITSM  
(Single cycle, T initial = 25°C)  
J
tp = 10 ms  
tp = 8.3 ms  
I2t  
I2t Value for fusing  
A2s  
TO-92  
SOT-223  
di/dt  
Critical rate of rise of on-state current IG = 10mA  
50  
A/ꢀs  
T = 125°C  
J
IGM  
Peak gate current  
tp = 10 ꢀs  
1.0  
A
T = 125°C  
J
PG(AV)  
Tstg  
Average gate power dissipation  
Storage junction temperature range  
Operating junction temperature range  
0.1  
W
T = 125°C  
J
-40 to 150  
-40 to 125  
°C  
T
J
Sx02xS EV Series 1.5 Amp Sensitive SCRs  
190  
Power Thyristor Databook  
www.littelfuse.com  
©2008 Littelfuse  

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