Datasheet > S601E75AP

S601E75AP

更新时间： 2024-09-11 04:17:51

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
9页	964K
描述
Silicon Controlled Rectifier, 640mA I(T), 600V V(DRM)

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中文翻译

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数据手册

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S601E75AP 数据手册

Teccor^®brandThyristors

1 Amp Standard SCRs

RoHS

Sx01E & SxN1 Series

Description

Excellentꢀforꢀlowerꢀcurrentꢀheat,ꢀlamp,ꢀandꢀaudibleꢀalarmꢀ

controls for home goods.

Standard phase control SCRs are triggered with few

milliamperes of current at less than 1.5V potential.

Features & Beneﬁts

•ꢀ

RoHSꢀcompliant

•ꢀ

Voltageꢀcapabilityꢀupꢀ

to 600 V

Glassꢀ–ꢀpassivatedꢀ

junctions

•ꢀ

Surgeꢀcapabilityꢀupꢀtoꢀ

30 A

Applications

Main Features

Typical applications are AC solid-state switches,

ﬂuidlevel sensors, strobes, and capacitive-discharge

ignition systems.

Symbol

Value

Unit

I_T(RMS)

V_DRM/V_RRM

I_GT

400 to 600

Additional Information

Schematic Symbol

Datasheet

Resources

Samples

Absolute Maximum Ratings — Standard SCRs

Symbol

I_T(RMS)

I_T(AV)

Parameter

Test Conditions

T_Cꢀ=ꢀ90°C

Value

Unit

RMS on-state current

Average on-state current

T_Cꢀ=ꢀ90°C

0.64

singleꢀhalfꢀcycle;ꢀfꢀ=ꢀ50Hz;

T_J(initial) = 25°C

I_TSM

Peak non-repetitive surge current

singleꢀhalfꢀcycle;ꢀfꢀ=ꢀ60Hz;

T_J(initial) = 25°C

I²t

I₂t Value for fusing

Critical rate of rise of on-state current

Peak gate current

t_p= 8.3 ms

fꢀ=ꢀ60Hzꢀ;ꢀT_J= 125°C

T_J= 125°C

3.7

A²s

A/μs

di/dt

I_GM

1.5

0.3

P_G(AV)

T_stg

T_J

Average gate power dissipation

Storage temperature range

T_J= 125°C

-40 to 150

-40 to 125

°C

Operatingꢀjunctionꢀtemperatureꢀrange

°C

Speciﬁcations are subject to change without notice.

Revised: 12/14/14

12 3 4 5 6 7...9

中文翻译

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