Datasheet > S5K-E3/9AT

S5K-E3/9AT

更新时间： 2024-01-31 05:16:21

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	97K
描述
DIODE GEN PURP 800V 5A DO214AB

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数据手册

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S5K-E3/9AT 数据手册

S5A, S5B, S5D, S5G, S5J, S5K, S5M

www.vishay.com

Vishay General Semiconductor

Surface-Mount Glass Passivated Rectifier

FEATURES

Available

• Low profile package

• Ideal for automated placement

• Glass passivated pellet chip junction

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

SMC (DO-214AB)

Cathode

Anode

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3 or P/NHM3

LINKS TO ADDITIONAL RESOURCES

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

3D Models

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes for consumer,

automotive and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

5.0 A

MECHANICAL DATA

Case: SMC (DO-214AB)

50 V, 100 V, 200 V, 400 V, 600 V,

800 V, 1000 V

V_RRM

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/N-M3 - halogen-free, RoHS-compliant, commercial

grade

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B,.....)

I_FSM

100 A

10 μA

I_R

V_F

1.15 V

T_Jmax.

150 °C

Package

SMC (DO-214AB)

Single

Circuit configuration

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3, M3, and HE3 suffix meets JESD 201 class 2 whisker test

Polarity: color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

S5A

S5B

S5D

S5G

S5J

S5K

S5M UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

5.0

600

420

600

800

560

800

1000

700

Maximum DC blocking voltage

Maximum average forward rectified current at T_L= 75 °C

100

1000

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

100

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

°C

Revision: 15-Apr-2020

Document Number: 88931

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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