S5688J

更新时间： 2024-11-25 03:34:11

品牌	Logo	应用领域
EIC		整流二极管
页数	文件大小	规格书
2页	37K
描述
SILICON RECTIFIER DIODES

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中文翻译

获取价格

技术参数
数据手册
替代型号

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S5688J 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.76
Is Samacsys：	N	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

S5688J 数据手册

SILICON RECTIFIER DIODES

R-1

S5688B/G/J/N

PRV : 100 - 1000 Volts

Io : 1.0 Ampere

1.00 (25.4)

FEATURES :

MIN.

0.099 (2.51)

0.095 (2.42)

* High current capability

* High surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

* Pb / RoHS Free

0.138 (3.5)

0.114 (2.9)

1.00 (25.4)

MIN.

0.024 (0.6)

0.020 (0.5)

MECHANICAL DATA :

* Case : Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

Dimensions in inches and ( millimeters )

* Weight : 0.20 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 50 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

SYMBOL S5688B S5688G S5688J S5688N UNIT

VRRM

VRMS

VDC

100

400

280

400

600

420

600

1000

700

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Current

Maximum Peak Forward Surge Current Single half sine wave

superimposed on rated load (JEDEC Method)

Maximum Forward Voltage drop per diode at IF = 1.0 A

Repetitive Peak Reverse Current

IF(AV)

1.0

(50Hz)

(60Hz)

(50Hz)

(60Hz)

IFSM

1.2

IRRM

°C

Junction Temperature Range

- 40 to + 150

Storage Temperature Range

TSTG

Page 1 of 2

Rev. 02 : March 17, 2005

中文翻译

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S5688J 替代型号

型号	品牌	替代类型	描述	数据表
S5566J	TOSHIBA	功能相似	GENERAL PURPOSE RECTIFIER APPLICATIONS

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