Datasheet > S3YB

S3YB

更新时间： 2024-11-25 14:51:47

品牌	Logo	应用领域
鲁光 - LGE		整流二极管普通整流二极管
页数	文件大小	规格书
2页	1169K
描述
普通整流二极管

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S3YB 数据手册

S3TB - S3YB

3.0 AMPS. Surface Mount Rectifiers

Features

SMB/DO-214AA

ꢀ

For surface mounted application

Glass passivated junction chip.

Low forward voltage drop

High current capability

Easy pick and place

High surge current capability

Plastic material used carries Underwriters

Laboratory Classification 94V-0

High temperature soldering:

260^oC / 10 seconds at terminals

0.180(4.57)

0.160(4.06)

0.086(2.20)

0.077(1.95)

0.155(3.94)

0.130(3.30)

0.209(5.30)

0.201(5.10)

ꢀ

0.012(0.30)

0.006(0.15)

Mechanical Data

0.096(2.44)

0.084(2.13)

ꢀ

Case: Molded plastic

0.059(1.50)

0.035(0.90)

0.008(0.20)

0.002(0.05)

Terminals: Pure tin plated, lead free.

Polarity: Indicated by cathode band

Weight: 0.093 gram

Dimensions in inches and(millimeters)

Marking Information

LGE：Lu Guang Electronic

XXXX：marking code (S3T-S3Y)

XXXX

Maximum Ratings and Electrical Characteristics

Rating at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

Symbol S3TB

S3WB

1600

820

S3XB

1800

880

S3YB

2000

940

Units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

1300

760

1300

1600

1800

2000

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

@T_L=75 ^oC

I_(AV)

3.0

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method )

I_FSM

Maximum Instantaneous Forward Voltage

@ 3.0A

V_F

I_R

1.15

Maximum DC Reverse Current @ T_A=25 ^oC

250

at Rated DC Blocking Voltage @ T_A=125 ^oC

Typical Reverse Recovery Time ( Note 1 )

Typical Junction Capacitance ( Note 2 )

Typical Thermal Resistance (Note 3)

Operating Temperature Range

Trr

1.5

θJL

^oC/W

^oC

T_J

-55 to +150

Storage Temperature Range

T_STG

^oC

1. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A

2. Measured at 1 MHz and Applied V_R=4.0 Volts

Notes:

3. Measured on P.C. Board with 0.4” x 0.4” (10mm x 10mm) Copper Pad Areas.

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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