5秒后页面跳转
S3W PDF预览

S3W

更新时间: 2023-12-06 19:52:17
品牌 Logo 应用领域
鲁光 - LGE 整流二极管普通整流二极管
页数 文件大小 规格书
2页 1356K
描述
普通整流二极管

S3W 技术参数

Case Style:SMCIF(A):3.0
Maximum recurrent peak reverse voltage:1600Peak forward surge current:100
Maximum instantaneous forward voltage:1.2@IVA(A):3.0
Maximum reverse current:10.0TRR(nS):/
class:Diodes

S3W 数据手册

 浏览型号S3W的Datasheet PDF文件第2页 
S3T-S3Y  
3.0AMPS. Surface Mount Rectifiers  
SMC/DO-214AB  
Features  
For surface mounted application  
Glass passivated junction chip.  
Low forward voltage drop  
High current capability  
Easy pick and place  
High surge current capability  
Plastic material used carries Underwriters  
Laboratory Classification 94V-0  
High temperature soldering:  
260oC / 10 seconds at terminals  
Mechanical Data  
Case: Molded plastic  
Terminals: Pure tin plated, lead free.  
Polarity: Indicated by cathode band  
Weight: 0.21 gram  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Type Number  
Symbol  
VRRM  
VRMS  
VDC  
S3T  
1300  
760  
S3W  
1600  
820  
S3X  
1800  
880  
S3Y  
2000  
940  
Units  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
Maximum DC Blocking Voltage  
1300  
1600  
1800  
2000  
Maximum Average Forward Rectified Current  
@TL =105 oC  
I(AV)  
3.0  
100  
1.15  
A
A
V
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
IFSM  
Maximum Instantaneous Forward Voltage  
@ 3.0A  
VF  
IR  
Maximum DC Reverse Current @ TA =25 oC  
10.0  
250  
uA  
uA  
at Rated DC Blocking Voltage @ TA=125 oC  
Typical Reverse Recovery Time ( Note 1 )  
Typical Junction Capacitance ( Note 2 )  
Trr  
Cj  
1.5  
60  
uS  
pF  
R
R
13  
47  
θJL  
Typical Thermal Resistance (Note 3)  
oC/W  
θJA  
Operating Temperature Range  
Storage Temperature Range  
TJ  
-55 to +150  
-55 to +150  
oC  
oC  
TSTG  
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied VR=4.0 Volts  
Notes:  
3. Measured on P.C. Board with 0.4” x 0.4” (10mm x 10mm) Copper Pad Areas.  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

与S3W相关器件

型号 品牌 获取价格 描述 数据表
S3WB LGE

获取价格

暂无描述
S3WB20 SHINDENGEN

获取价格

Bridge Diode(200V 2.3A)
S3WB20 EIC

获取价格

Bridge Rectifiers
S3WB60 SHINDENGEN

获取价格

Bridge Diode(600V 2.3A)
S3X DIOTEC

获取价格

Surface Mount Si-Rectifiers
S3X LGE

获取价格

普通整流二极管
S3X-13-F DIODES

获取价格

3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
S3XB LGE

获取价格

暂无描述
S3XB-13-F DIODES

获取价格

3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
S3XDP512F0CFU FREESCALE

获取价格

Covers S12XD, S12XB and S12XA Families