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S3TB PDF预览

S3TB

更新时间: 2024-10-02 15:50:19
品牌 Logo 应用领域
鲁光 - LGE /
页数 文件大小 规格书
2页 1169K
描述
暂无描述

S3TB 技术参数

Case Style:SMBIF(A):3.0
Maximum recurrent peak reverse voltage:1300Peak forward surge current:100
Maximum instantaneous forward voltage:1.2@IVA(A):3.0
Maximum reverse current:10.0TRR(nS):/
class:Diodes

S3TB 数据手册

 浏览型号S3TB的Datasheet PDF文件第2页 
S3TB - S3YB  
3.0 AMPS. Surface Mount Rectifiers  
Features  
SMB/DO-214AA  
For surface mounted application  
Glass passivated junction chip.  
Low forward voltage drop  
High current capability  
Easy pick and place  
High surge current capability  
Plastic material used carries Underwriters  
Laboratory Classification 94V-0  
High temperature soldering:  
260oC / 10 seconds at terminals  
0.180(4.57)  
0.160(4.06)  
0.086(2.20)  
0.077(1.95)  
0.155(3.94)  
0.130(3.30)  
0.209(5.30)  
0.201(5.10)  
0.012(0.30)  
0.006(0.15)  
Mechanical Data  
0.096(2.44)  
0.084(2.13)  
Case: Molded plastic  
0.059(1.50)  
0.035(0.90)  
0.008(0.20)  
0.002(0.05)  
Terminals: Pure tin plated, lead free.  
Polarity: Indicated by cathode band  
Weight: 0.093 gram  
Dimensions in inches and(millimeters)  
Marking Information  
LGELu Guang Electronic  
XXXXmarking code (S3T-S3Y)  
XXXX  
Maximum Ratings and Electrical Characteristics  
Rating at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Type Number  
Symbol S3TB  
S3WB  
1600  
820  
S3XB  
1800  
880  
S3YB  
2000  
940  
Units  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
1300  
760  
1300  
V
V
V
1600  
1800  
2000  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
@TL =75 oC  
I(AV)  
3.0  
80  
A
A
V
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
IFSM  
Maximum Instantaneous Forward Voltage  
@ 3.0A  
VF  
IR  
1.15  
Maximum DC Reverse Current @ TA =25 oC  
10  
250  
uA  
uA  
at Rated DC Blocking Voltage @ TA=125 oC  
Typical Reverse Recovery Time ( Note 1 )  
Typical Junction Capacitance ( Note 2 )  
Typical Thermal Resistance (Note 3)  
Operating Temperature Range  
Trr  
Cj  
1.5  
40  
10  
uS  
pF  
R
θJL  
oC/W  
oC  
TJ  
-55 to +150  
-55 to +150  
Storage Temperature Range  
TSTG  
oC  
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied VR=4.0 Volts  
Notes:  
3. Measured on P.C. Board with 0.4” x 0.4” (10mm x 10mm) Copper Pad Areas.  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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