Datasheet > S3MB-T1

S3MB-T1

更新时间： 2024-11-27 20:02:35

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
3页	40K
描述
Rectifier Diode, 1 Element, 3A, 1000V V(RRM),

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中文翻译

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数据手册

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S3MB-T1 数据手册

WTE

POWER SEMICONDUCTORS

S3AB – S3MB

3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER

Features

Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop

Surge Overload Rating to 100A Peak

Low Power Loss

Built-in Strain Relief

Plastic Case Material has UL Flammability

Classification Rating 94V-O

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SMB/DO-214AA

Mechanical Data

Dim

Min

3.30

4.06

1.91

0.152

5.08

2.13

0.051

0.76

Max

3.94

4.70

2.11

Case: Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

0.305

5.59

2.44

0.203

1.27

Weight: 0.093 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol

S3AB S3BB

S3DB S3GB

S3JB

S3KB S3MB Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

3.0

Average Rectified Output Current @T_L= 75°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

100

Forward Voltage

@I_F= 3.0A

V^FM

I^RM

1.20

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

5.0

250

µA

Reverse Recovery Time (Note 1)

t^rr

C^j

2.5

µS

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Operating and Storage Temperature Range

R^ꢀ^JL

T^j,T^STG

K/W

°C

-65 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A,

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm²land area.

S3AB – S3MB

1 of 3

12 3

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