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S3DG6

更新时间: 2024-02-23 21:38:05
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描述
S3DG6型NPN硅双三极管

S3DG6 数据手册

  
S3DG6型NPN硅双三极管  
S3DG6  
测试条件  
参数符号 单位  
A
B
C
D
E
F
PCM  
Ta=25℃  
100×2  
20  
mW  
mA  
ICM  
TjM  
175  
V(BR)CB0  
V(BR)CE0  
V(BR)EB0  
VCEsat  
IC=10μA  
IC=10μA  
IE=10μA  
IC=10mA  
≥45  
V ≥15 ≥20 ≥20 ≥30 ≥20 ≥30  
V ≥30  
≥4  
≤0.35  
≤1  
V
V
V
VBEsat  
IB=1mA  
VCB =10V  
VCE=10V  
VEB=1.5V  
VCE=10V  
ICB0  
ICE0  
IEB0  
≤0.01  
≤0.01  
≤0.01  
μA  
μA  
μA  
hFE  
≥30  
IC=3mA  
hFE对称性  
≥90%  
≥95%  
%
VCE=10V  
IC=3mA  
fT  
MHz  
≥150 ≥250  
≥150  
f0=30MHz  
COb  
PF  
T13-B  

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