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S34ML01G200BHI000 PDF预览

S34ML01G200BHI000

更新时间: 2024-11-09 20:10:07
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 内存集成电路
页数 文件大小 规格书
71页 2106K
描述
Flash, 128MX8, 25ns, PBGA63, BGA-63

S34ML01G200BHI000 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:VFBGA, BGA63,10X12,32Reach Compliance Code:compliant
HTS代码:8542.32.00.51风险等级:3.55
最长访问时间:25 ns命令用户界面:YES
数据轮询:NOJESD-30 代码:R-PBGA-B63
长度:11 mm内存密度:1073741824 bit
内存集成电路类型:FLASH内存宽度:8
湿度敏感等级:3功能数量:1
部门数/规模:1K端子数量:63
字数:134217728 words字数代码:128000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128MX8
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装等效代码:BGA63,10X12,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH页面大小:2K words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1 mm部门规模:128K
最大待机电流:0.00005 A子类别:Flash Memories
最大压摆率:0.03 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
类型:SLC NAND TYPE宽度:9 mm
Base Number Matches:1

S34ML01G200BHI000 数据手册

 浏览型号S34ML01G200BHI000的Datasheet PDF文件第2页浏览型号S34ML01G200BHI000的Datasheet PDF文件第3页浏览型号S34ML01G200BHI000的Datasheet PDF文件第4页浏览型号S34ML01G200BHI000的Datasheet PDF文件第5页浏览型号S34ML01G200BHI000的Datasheet PDF文件第6页浏览型号S34ML01G200BHI000的Datasheet PDF文件第7页 
S34ML01G2  
S34ML02G2  
S34ML04G2  
1 Gb, 2 Gb, 4 Gb, 3 V, 4-bit ECC, SLC  
NAND Flash Memory for Embedded  
Distinctive Characteristics  
Density  
Device Size  
• 1 Gb: 1 plane per device or 128 Mbyte  
• 2 Gb: 2 planes per device or 256 Mbyte  
• 4 Gb: 2 planes per device or 512 Mbyte  
1 Gb / 2 Gb / 4 Gb  
Architecture  
Input / Output Bus Width: 8 bits / 16 bits  
Page size:  
NAND Flash interface  
• ×8:  
Open NAND Flash Interface (ONFI) 1.0 compliant  
Address, Data, and Commands multiplexed  
1 Gb: (2048 + 64) bytes; 64-byte spare area  
2 Gb / 4 Gb: (2048 + 128) bytes; 128-byte spare area  
• ×16:  
Supply Voltage  
3.3-V device: VCC = 2.7 V ~ 3.6 V  
1 Gb: (1024 + 32) words; 32-word spare area  
2 Gb / 4 Gb (1024 + 64) words; 64-word spare area  
Security  
Block size: 64 Pages  
• ×8:  
1 Gb: 128 KB+ 4 KB  
2 Gb / 4 Gb: 128 KB + 8 KB  
• ×16  
1 Gb: 64k + 2k words  
2 Gb / 4 Gb: 64k + 4k words  
Plane size  
One Time Programmable (OTP) area  
Serial number (unique ID) (Contact factory for support)  
Hardware program/erase disabled during power transition  
Additional features  
2 Gb and 4 Gb parts support Multiplane Program and Erase  
commands  
Supports Copy Back Program  
2 Gb and 4 Gb parts support Multiplane Copy Back Program  
Supports Read Cache  
• ×8  
1 Gb: 1024 blocks per plane or (128 MB + 4 MB  
2 Gb: 1024 blocks per plane or (128 MB + 8 MB  
4 Gb: 2048 blocks per plane or (256 MB + 16 MB  
Electronic signature  
Manufacturer ID: 01h  
• ×16  
Operating temperature  
Industrial: –40 °C to 85 °C  
Industrial Plus: –40 °C to 105 °C  
1 Gb: 1024 blocks per plane or (64M + 2M) words  
2 Gb: 1024 Blocks per Plane or (64M + 4M) words  
4 Gb: 2048 Blocks per Plane or (128M + 8M) words  
Performance  
Page Read / Program  
10 Year Data retention (Typ)  
For one plane structure (1-Gb density)  
• Block zero is valid and will be valid for at least 1,000 pro-  
gram-erase cycles with ECC  
Random access: 25 µs (Max) (S34ML01G2)  
Random access: 30 µs (Max) (S34ML02G2, S34ML04G2)  
Sequential access: 25 ns (Min)  
For two plane structures (2-Gb and 4-Gb densities)  
• Blocks zero and one are valid and will be valid for at least  
1,000 program-erase cycles with ECC  
Program time / Multiplane Program time: 300 µs (Typ)  
Block Erase (S34ML01G2)  
Block Erase time: 3 ms (Typ)  
Package options  
Pb-free and low halogen  
48-Pin TSOP 12 × 20 × 1.2 mm  
63-Ball BGA 9 × 11 × 1 mm  
Block Erase / Multiplane Erase (S34ML02G2, S34ML04G2)  
Block Erase time: 3.5 ms (Typ)  
Reliability  
100,000 Program / Erase cycles (Typ)  
(with 4-bit ECC per 528 bytes (×8) or 264 words (×16))  
67-Ball BGA 8 × 6.5 × 1 mm (S34ML01G2, S34ML02G2)  
Cypress Semiconductor Corporation  
Document Number: 002-00499 Rev. *P  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised December 21, 2017  
 

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