Datasheet > S34BF

S34BF

更新时间： 2024-11-08 00:29:43

品牌	Logo	应用领域
平伟 - PINGWEI		/
页数	文件大小	规格书
2页	181K
描述
3.0AMPS. SCHOTTKY BARRIER RECTIFIERS

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中文翻译

获取价格

数据手册

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S34BF 数据手册

S32BF THRU S320BF

3.0AMPS. SCHOTTKY BARRIER RECTIFIERS

SMBF

FEATURE

.For surface mounted application

.High current capability

.147(3.75)

.135(3.45)

.083(2.1)

.074(1.9)

.Low forward voltage drop

.Low power loss, high efficiency

.High surge current capability

.200(5.10)

.217(5.50)

.High temperature soldering guaranteed:

260℃/10 seconds at terminals.

.163(4.15)

.175(4.45)

MECHANICAL DATA

.041(1.05)

.061(1.55)

.006(0.15)

.010(0.25)

.Terminal: Solder plated

.028(0.70)

.053(1.35)

.035(0.9)

.059(1.5)

.Case: Molded with UL-94 Class V-0 recognized

Flame Retardant Epoxy

.013(0.35)

.028(0.70)

.Polarity: color band denotes cathode

.Packaging:12mm tape per EIA STD RS-481

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

SYMBOL S32BF

S34BF

S36BF

S310BF

S315BF

S320BF units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

Maximum DC blocking Voltage

Maximum Average Forward Rectified Current

at T_L=90°C

100

I_F(AV)

3.0

Peak Forward Surge Current 8.3ms single half

sine- wave superimposed on rated load (JEDEC

method)

I_FSM

80.0

Maximum Forward Voltage at 3.0A DC

Maximum DC Reverse Current @T_A=25°C

V_F

I_R

0.45

0.55

0.5

0.70

0.85

0.95

0.1

10.0

at rated DC blocking voltage

@T_A=100°C

40.0

300

Typical Junction Capacitance (Note1)

C_J

R_(JA)

R_(JL)

T_STG

T_J

Typical Thermal Resistance (Note 2)

°C/W

Storage Temperature

Operation Junction Temperature

Note:

-55 to +150

°C

-55 to +125

1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

2. Thermal Resistance from Junction to Ambient and Lead, Mounted.Measured on P.C. Board with 0.2×0.2″(5.0×5.0mm) Copper

Pad Areas.

- 297 -

中文翻译

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与S34BF相关器件

型号	品牌	获取价格	描述	数据表
S34BF10A	INFINEON	获取价格	Silicon Controlled Rectifier, 715A I(T)RMS, 455000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
S34BF10B	INFINEON	获取价格	Silicon Controlled Rectifier, 715A I(T)RMS, 455000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
S34BF12A	INFINEON	获取价格	Silicon Controlled Rectifier, 715A I(T)RMS, 455000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E
S34BF12B	INFINEON	获取价格	Silicon Controlled Rectifier, 715A I(T)RMS, 455000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E
S34BF14A	INFINEON	获取价格	Silicon Controlled Rectifier, 740A I(T)RMS, 470000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 E
S34BF14B	INFINEON	获取价格	Silicon Controlled Rectifier, 740A I(T)RMS, 470000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 E
S34BF16A	INFINEON	获取价格	Silicon Controlled Rectifier, 740A I(T)RMS, 470000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 E
S34BF16B	INFINEON	获取价格	Silicon Controlled Rectifier, 740A I(T)RMS, 470000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 E
S34BF2A	INFINEON	获取价格	Silicon Controlled Rectifier, 935A I(T)RMS, 595000mA I(T), 200V V(DRM), 200V V(RRM), 1 Ele
S34BF2B	INFINEON	获取价格	Silicon Controlled Rectifier, 935A I(T)RMS, 595000mA I(T), 200V V(DRM), 200V V(RRM), 1 Ele

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