Datasheet > S30U150FCT

S30U150FCT

更新时间： 2024-09-25 01:25:51

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描述
Extreme Low VF Trench MOS Schottky

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S30U150FCT 数据手册

S30U150FCT

REVERSE VOLTAGE - 150 Volts

FORWARD CURRENT - 30.0 Amperes

Extreme Low VF Trench MOS Schottky

FEATURES

TO-220F

‧ Low power loss, high efficiency

‧ Low forward voltage drop

‧ High forward surge capability

‧ High frequency operation

‧ Excellent high temperature stability

‧ Trench MOS Schottky technology

MECHANICAL DATA

‧ Case: TO-220F

‧ Polarity: As marked

‧ Weight: Approximated 1.6 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Characteristics

Symbol

Value

Unit

Maximum Repetitive Peak Reverse Voltage

V_RRM

150

RMS Reverse Voltage

Forward Voltage Drop

V_RMS

105

Typ.

0.80

0.64

0.85

0.69

Typ.

Max.

I_F=10A

(T_J=25℃)

(T_J=125℃)

V_F

I_F=15 A (T_J=25℃)

I_F=15 A (T_J=125℃)

Maximum Reverse Current at Rated V_RRM

T_J=25°C

0.90

0.75

Max.

I_R

µA

T_J=125°C

Maximum Average Forward Rectified Current

Total device

Per diode

Peak Forward Surge Current,

8.3 ms Single Half Sine-wave

Superimposed on Rated Load (JEDEC method)

I_O

I_FSM

200

Peak Repetitive Reverse Current at tp=2 µs, 1 kHz,

Operating and StorageTemperature Range

I_RRM

1.0

T_J,T_STG

-65 to +150

°C

S30U150FCT_V0

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