Datasheet > S306D1

S306D1

更新时间： 2024-09-24 06:46:11

品牌	Logo	应用领域
HUTSON		/
页数	文件大小	规格书
2页	130K
描述
Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-202

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数据手册

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S306D1 数据手册

MAXIMUM RATINGS

SYMBOL VDRM

DEVICE NUMBERS

200µA Gate

UNITS

S106F*

S206F*

S206A*

S206B*

S206D*

S206M*

S306F*

100

200

400

S106A*

S106B*

S106D*

S106M*

S306A*

S306B*

S306D*

S306M*

600

REPETITIVE PEAK OFF-STATE VOLTAGE (1)

GATE OPEN, AND TJ = 110° C

VDRM &

VRRM

VOLT

500µA Gate

S107F*

S107A*

S107B*

S107D*

S107M*

S207F*

S207A*

S207B*

S207D*

S207M*

S307F*

S307A*

S307B*

S307D*

S307M*

100

200

400

600

RMS ON-STATE CURRENT AT TC = 80º C AND

CONDUCTION, ANGLE OF 360º

IT(RMS)

ITSM

4.0

6.0

8.0

AMP

PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT,

ONE-CYCLE, AT 50HZ OR 60HZ

PEAK GATE - TRIGGER CURRENT FOR 3µSEC. MAX.

PEAK GATE - POWER DISSIPATION AT IGT < IGTM

AVERAGE GATE - POWER DISSIPATION

STORAGE TEMPERATURE RANGE

IGTM

PGM

0.1

AMP

WATT

°C

PG(AV)

Tstg

Toper

0.1

-40 to +150

-40 to +110

OPERATING TEMPERATURE RANGE, Tj

°C

ELECTRICAL CHARACTERISTICS

AT SPECIFIED CASE TEMPERATURE

PEAK OFF - STATE CURRENT (1)

TC = 110° C VDRM &VRRM = MAX. RATING

MAXIMUM ON - STATE VOLTAGE, (PEAK) AT TC = 25° C

AND IT = RATED AMPS

IDRM &

IRRM

MAX.

VOLT

MAX.

0.1

2.2

0.1

1.6

0.1

2.5

VTM

IHO

MAX.

DC HOLDING CURRENT, (1)AND TC = 25° C

CRITICAL RATE-OF-RISE OF OFF-STATE VOLTAGE, (1)

FOR VD = VDRM GATE OPEN, TC = 110° C

CRITICAL

dv/dt

V/µSEC.

DC GATE-TRIGGER CURRENT FOR ANODE

VOLTAGE - 6VDC, RL = 100 W AND

AT TC = 25° C

200

500

200

500

200

500

µA MAX.

IGT

DC GATE - TRIGGER VOLTAGE FOR ANODE VOLTAGE =

6VDC, RL = 100 W AND AT TC = 25° C

VOLT

MAX.

VGT

T gt

0.8

1.2

0.8

GATE CONTROLLED TURN-ON TIME FOR

t D+ t R, IGT = 20 mA and TC = 25° C

µsec.

°C / WATT

TYP

R0J-C

THERMAL RESISTANCE, JUNCTION-TO-CASE

4.4

*Note:

Device number suffix 1 = with TAB (Type 1)

Device number suffix 2 = no TAB (Type 2)

(1) R G – K = 1 K W

SOLID STATE CONTROL DEVICES

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与S306D1相关器件

型号	品牌	获取价格	描述	数据表
S306F1	HUTSON	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element,
S306M1	HUTSON	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element
S306M2	HUTSON	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element
S307	MICROSEMI	获取价格	Silicon Power Rectifier
S3071	HAMAMATSU	获取价格	Si PIN photodiode Large area, high-speed Si PIN photodiodes
S3071_15	HAMAMATSU	获取价格	Si PIN photodiodes
S30710	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 85A, Silicon, DO-5,
S3072	HAMAMATSU	获取价格	Si PIN photodiode Large area, high-speed Si PIN photodiodes
S30720	MICROSEMI	获取价格	Silicon Power Rectifier
S30740	MICROSEMI	获取价格	Silicon Power Rectifier