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S2SA1774G PDF预览

S2SA1774G

更新时间： 2024-11-26 12:27:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管光电二极管
页数 文件大小 规格书
5页 97K
描述
PNP Silicon General Purpose Amplifier Transistor

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中文翻译

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S2SA1774G 技术参数

是否无铅：不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：8 weeks风险等级：1.38
Is Samacsys：N最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE
最小直流电流增益 (hFE)：120JESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：0.15 W参考标准：AEC-Q101
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：140 MHzBase Number Matches：1

S2SA1774G 数据手册

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2SA1774G, S2SA1774G  
PNP Silicon General  
Purpose Amplifier Transistor  
This PNP transistor is designed for general purpose amplifier  
applications. This device is housed in the SC−75/SOT−416/SC−90  
package which is designed for low power surface mount  
applications, where board space is at a premium.  
http://onsemi.com  
Features  
• Reduces Board Space  
• High h , 210−460 (typical)  
FE  
SC−75  
CASE 463  
STYLE 1  
• Low V  
, < 0.5 V  
CE(sat)  
• Available in 8 mm, 7−inch/3000 Unit Tape and Reel  
• S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
COLLECTOR  
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant*  
MAXIMUM RATINGS (T = 25°C)  
A
1
2
BASE  
EMITTER  
Rating  
Symbol  
Value  
−60  
Unit  
Vdc  
Collector − Emitter Voltage  
Collector − Base Voltage  
Emitter − Base Voltage  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
MARKING DIAGRAM  
V
V
−50  
Vdc  
−6.0  
−100  
Vdc  
F9 M G  
Collector Current − Continuous  
I
C
mAdc  
G
THERMAL CHARACTERISTICS  
Characteristic  
1
Symbol  
Max  
150  
Unit  
mW  
°C  
F9 = Device Code  
Power Dissipation (Note 1)  
Junction Temperature  
P
D
M
G
= Date Code*  
= Pb−Free Package  
T
J
150  
(Note: Microdot may be in either location)  
Storage Temperature Range  
T
stg  
−55 ~ +150  
°C  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
RecommendedOperating Conditions may affect device reliability.  
1. Device mounted on a FR−4 glass epoxy printed circuit board using the  
minimumrecommended footprint.  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
2SA1774G  
SC−75  
3,000/Tape & Reel  
(Pb−Free)  
S2SA1774G  
2SA1774T1G  
SC−75  
(Pb−Free)  
3,000/Tape & Reel  
3,000/Tape & Reel  
SC−75  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
downloadthe ON Semiconductor Soldering and Mounting Techniques Reference  
Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 9  
2SA1774/D  
 
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中文翻译

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S2SA1774G 替代型号

型号 品牌 替代类型 描述 数据表
2SA1774T1G ONSEMI

类似代替

 PNP Silicon General Purpose Amplifier Transistor
2SA1774G ONSEMI

类似代替

 PNP Silicon General Purpose Amplifier Transistor

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