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S2J-M3 PDF预览

S2J-M3

更新时间: 2024-10-30 01:24:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 89K
描述
Glass passivated pellet chip junction

S2J-M3 数据手册

 浏览型号S2J-M3的Datasheet PDF文件第2页浏览型号S2J-M3的Datasheet PDF文件第3页浏览型号S2J-M3的Datasheet PDF文件第4页 
S2A-M3, S2B-M3, S2D-M3, S2G-M3, S2J-M3, S2K-M3, S2M-M3  
www.vishay.com  
Vishay General Semiconductor  
Surface Mount Glass Passivated Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated pellet chip junction  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
DO-214AA (SMB)  
• AEC-Q101 qualified available  
-Automotive ordering code: base P/NHM3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes for consumer,  
automotive, and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.5 A  
50V,100V,200V,400V,600V,  
800 V, 1000 V  
VRRM  
MECHANICAL DATA  
Case: DO-214AA (SMB)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3 - RoHS-compliant, commercial grade  
Base P/NHM3 - RoHS-compliant, AEC-Q101 qualified  
IFSM  
IR  
50 A  
1.0 μA  
VF  
1.15 V  
TJ max.  
Package  
Diode variations  
150 °C  
DO-214AA (SMB)  
Single die  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL S2A  
S2B  
SB  
S2D  
SD  
S2G  
SG  
S2J  
SJ  
S2K  
SK  
S2M UNIT  
Device marking code  
Max. repetitive peak reverse voltage  
Max. RMS voltage  
SA  
SM  
VRRM  
VRMS  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
Max. DC blocking voltage  
VDC  
100  
400  
1.5  
1000  
V
A
Max. average forward rectified current at TL= 100 °C  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
50  
A
Operating and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
Revision: 19-Feb-16  
Document Number: 89493  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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