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S2D-T3 PDF预览

S2D-T3

更新时间: 2024-02-14 08:04:07
品牌 Logo 应用领域
WTE 整流二极管光电二极管瞄准线功效
页数 文件大小 规格书
3页 43K
描述
2.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER

S2D-T3 技术参数

生命周期:Active包装说明:R-PDSO-C2
Reach Compliance Code:compliant风险等级:5.56
其他特性:LOW POWER LOSS应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
最大非重复峰值正向电流:60 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:200 V最大反向电流:5 µA
最大反向恢复时间:2.5 µs表面贴装:YES
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

S2D-T3 数据手册

 浏览型号S2D-T3的Datasheet PDF文件第2页浏览型号S2D-T3的Datasheet PDF文件第3页 
WTE  
PO WER SEM ICONDUCTORS  
S2A – S2M  
2.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER  
Features  
!
Glass Passivated Die Construction  
!
!
!
!
!
!
Ideally Suited for Automatic Assembly  
Low Forward Voltage Drop  
Surge Overload Rating to 60A Peak  
Low Power Loss  
Built-in Strain Relief  
Plastic Case Material has UL Flammability  
Classification Rating 94V-O  
B
D
A
F
C
H
G
E
SMB/DO-214AA  
Min  
Mechanical Data  
Dim  
A
Max  
3.94  
4.70  
2.11  
!
!
Case: Molded Plastic  
3.30  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
B
4.06  
C
1.91  
!
!
!
D
0.152  
5.08  
0.305  
5.59  
2.44  
0.203  
1.27  
E
Weight: 0.093 grams (approx.)  
F
2.13  
G
H
0.051  
0.76  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
S2A  
S2B  
S2D  
S2G  
S2J  
S2K  
S2M  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
2.0  
V
A
Average Rectified Output Current @TL = 110°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
60  
A
Forward Voltage  
@IF = 2.0A  
VFM  
IRM  
1.10  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 125°C  
5.0  
200  
µA  
Reverse Recovery Time (Note 1)  
trr  
Cj  
2.5  
30  
µS  
pF  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Operating and Storage Temperature Range  
RJL  
Tj, TSTG  
16  
K/W  
°C  
-55 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
3. Mounted on P.C. Board with 8.0mm2 land area.  
S2A – S2M  
1 of 3  
© 2002 Won-Top Electronics  

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