S2ABF THRU S2MBF
Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere
SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER
Features
SMBF
For surface mounted applications
Low profile package
0.146(3.70)
0.138(3.50)
0.086 (2.20)
0.075 (1.90)
Glass Passivated Chip Junction
Easy to pick and place
0.173(4.40)
0.165(4.20)
Lead free in comply with EU RoHS 2011/65/EU diretives
0.051(1.30)
0.043(1.10)
Mechanical Data
0.010(0.26)
0.007(0.18)
0.048(1.20)
0.031(0.80)
Cas e : JEDEC SMBF molded plastic body
Terminals : Solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Pos ition : Any
0.216(5.50)
0.200(5.10)
Weight
: 0.002 ounce, 0.057 grams
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
S2ABF S2BBF S2DBF S2GBF S2JBF S2KBF S2MBF
Parameter
SYMBOLS
UNITS
MDD
MDD
MDD
MDD
MDD
MDD
MDD
Marking Code
S2ABF S2BBF S2DBF S2GBF S2JBF S2KBF S2MBF
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
V
RMM
RMS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
100
1000
Maximum DC blocking voltage
V
DC
Maximum average forward rectified current
I
(AV)
A
2.0
at TL=65
℃
Peak forward surge current
50
I
FSM
8.3ms single half sine-wave
A
V
superimposed onrated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A
V
F
1.10
5.0
100.0
Maximum DCreverse current
at rated DCblocking voltage
T
A
=25
℃
I
R
μA
TA=125℃
25.0
60.0
pF
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
C
J
℃/
W
R
JA
-55 to +150
℃
Operating junction and storage temperature range T T
J, STG
Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
3.The typical data above is for reference only.
DN:T19613A0
https://www.microdiode.com
Rev:2019A0
Page :1