是否Rohs认证: | 符合 | 生命周期: | Not Recommended |
包装说明: | VFBGA, | Reach Compliance Code: | compliant |
风险等级: | 5.73 | 最长访问时间: | 80 ns |
启动块: | TOP | JESD-30 代码: | R-PBGA-B84 |
长度: | 11.6 mm | 内存密度: | 536870912 bit |
内存集成电路类型: | FLASH | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 84 |
字数: | 33554432 words | 字数代码: | 32000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -25 °C | 组织: | 32MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | VFBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
并行/串行: | PARALLEL | 编程电压: | 1.8 V |
座面最大高度: | 1 mm | 最大供电电压 (Vsup): | 1.95 V |
最小供电电压 (Vsup): | 1.7 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
类型: | NOR TYPE | 宽度: | 8 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
S29WS512RAABHW203 | SPANSION |
获取价格 |
Flash, 32MX16, 80ns, PBGA84, 11.60 X 8 MM, HALOGEN FREE AND LEAD FREE, FBGA-84 | |
S29WS512RAABHW300 | CYPRESS |
获取价格 |
Flash, 32MX16, 80ns, PBGA84, BGA-84 | |
S29WS512RAABHW320 | CYPRESS |
获取价格 |
Flash, 32MX16, 80ns, PBGA84, BGA-84 | |
S29WS-J | SPANSION |
获取价格 |
128/64 Megabit (8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Fla | |
S29WS-N | SPANSION |
获取价格 |
256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY | |
S29WS-NL | SPANSION |
获取价格 |
256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY | |
S29WS-P | SPANSION |
获取价格 |
512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Me | |
S29WS-P_07 | SPANSION |
获取价格 |
MirrorBit㈢ Flash Family 512/256/128 Mb (32/16 | |
S29WSXXXN | SPANSION |
获取价格 |
256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst M | |
S-29X90A | SII |
获取价格 |
CMOS SERIAL EEPROM |