S29WS512P
S29WS256P
S29WS128P
SUPPLEMENT
512/256/128 Mb (32/16/8 M x 16 bit), 1.8 V,
Simultaneous Read/Write Flash
Features
Single 1.8 V read/program/erase (1.70–1.95 V)
Hardware (WP#) protection of top and bottom sectors
Dual boot sector configuration (top and bottom)
Handshaking by monitoring RDY
90 nm MirrorBit™ Technology
Simultaneous Read/Write operation with zero latency
Random page read access mode of 8 words with 20 ns intra
Offered Packages
page access time
– WS512P/WS256P/WS128P: 84-ball FBGA
(11.6 mm x 8 mm)
32 Word / 64 Byte Write Buffer
Low VCC write inhibit
Sixteen-bank architecture consisting of
32/16/8 Mwords for 512/256/128P, respectively
Persistent and Password methods of Advanced Sector
Protection
Four 16 Kword sectors at both top and bottom of memory
array
Write operation status bits indicate program and erase
operation completion
510/254/126 64Kword sectors (WS512/256/128P)
Suspend and Resume commands for Program and Erase
Programmable linear (8/16/32) with or without wrap around
operations
and continuous burst read modes
Unlock Bypass program command to reduce programming
Secured Silicon Sector region consisting of 128 words each
time
for factory and 128 words for customer
Synchronous or Asynchronous program operation,
20-year data retention (typical)
independent of burst control register settings
Cycling Endurance: 100,000 cycles per sector (typical)
Command set compatible with JEDEC (42.4) standard
ACC input pin to reduce factory programming time
Support for Common Flash Interface (CFI)
General Description
The Cypress S29WS512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These burst mode Flash
devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate
data and address pins. These products can operate up to 104 MHz and use a single VCC of 1.7 V to 1.95 V that makes them ideal
for today’s demanding wireless applications requiring higher density, better performance and lowered power consumption.
Performance Characteristics
Read Access Times
Speed Option (MHz)
Current Consumption (typical values)
Continuous Burst Read @ 104 MHz
104
103.8
7.6
36 mA
40 mA
20 mA
20 µA
Max. Synch Access Time (tIACC
)
Simultaneous Operation 104 MHz
Program
Max. Synch. Burst Access, ns (tBACC
)
Max OE# Access Time, ns (tOE
)
7.6
Standby Mode
Max. Asynch. Access Time, ns (tACC
)
80
Typical Program & Erase Times
Single Word Programming
40 µs
Effective Write Buffer Programming (VCC) Per
Word
9.4 µs
Effective Write Buffer Programming (VACC) Per
Word
6 µs
Sector Erase (16 Kword Sector)
Sector Erase (64 Kword Sector)
350 ms
600 ms
Cypress Semiconductor Corporation
Document Number: 002-01747 Rev. *B
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised June 29, 2017
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