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S29GL032N11DFIV23 PDF预览

S29GL032N11DFIV23

更新时间： 2024-11-29 14:35:39
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 内存集成电路闪存
页数 文件大小 规格书
78页 966K
描述
Flash, 2MX16, 110ns, PBGA64, 9 X 9 MM, LEAD FREE, FBGA-64

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S29GL032N11DFIV23 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：LBGA, BGA64,8X8,40Reach Compliance Code：compliant
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.46最长访问时间：110 ns
备用内存宽度：8启动块：BOTTOM/TOP
命令用户界面：YES通用闪存接口：YES
数据轮询：YESJESD-30 代码：S-PBGA-B64
长度：9 mm内存密度：33554432 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1部门数/规模：64
端子数量：64字数：2097152 words
字数代码：2000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：2MX16封装主体材料：PLASTIC/EPOXY
封装代码：LBGA封装等效代码：BGA64,8X8,40
封装形状：SQUARE封装形式：GRID ARRAY, LOW PROFILE
页面大小：8/16 words并行/串行：PARALLEL
电源：1.8/3.3,3/3.3 V编程电压：3 V
认证状态：Not Qualified就绪/忙碌：YES
座面最大高度：1.4 mm部门规模：64K
最大待机电流：0.000005 A子类别：Flash Memories
最大压摆率：0.05 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：BALL
端子节距：1 mm端子位置：BOTTOM
切换位：YES类型：NOR TYPE
宽度：9 mmBase Number Matches：1

S29GL032N11DFIV23 数据手册

 浏览型号S29GL032N11DFIV23的Datasheet PDF文件第2页浏览型号S29GL032N11DFIV23的Datasheet PDF文件第3页浏览型号S29GL032N11DFIV23的Datasheet PDF文件第4页浏览型号S29GL032N11DFIV23的Datasheet PDF文件第5页浏览型号S29GL032N11DFIV23的Datasheet PDF文件第6页浏览型号S29GL032N11DFIV23的Datasheet PDF文件第7页 
S29GL064N, S29GL032N  
64 Mbit, 32 Mbit 3 V Page Mode  
MirrorBit Flash  
Distinctive Characteristics  
■ Low power consumption  
Architectural Advantages  
❐ 25 mA typical initial read current,  
1 mA typical page read current  
■ Single power supply operation  
❐ 50 mA typical erase/program current  
❐ 1 µA typical standby mode current  
■ Manufactured on 110 nm MirrorBit process technology  
■ Secured SiliconSector region  
❐ 128-word/256-byte sector for permanent, secure identifica-  
tion through an 8-word/16-byte random Electronic Serial  
Number, accessible through a command sequence  
■ Package options  
❐ 48-pin TSOP  
❐ 56-pin TSOP  
❐ Programmed and locked at the factory or by the customer  
❐ 64-ball Fortified BGA  
❐ 48-ball fine-pitch BGA  
■ Flexible sector architecture  
❐ 64Mb (uniform sector models): One hundred twenty-eight 32  
Kword (64 KB) sectors  
Software and Hardware Features  
❐ 64 Mb (boot sector models): One hundred twenty-seven 32  
■ Software features  
❐ Advanced Sector Protection: offers Persistent Sector Protec-  
tion and Password Sector Protection  
❐ Program Suspend & Resume: read other sectors before pro-  
gramming operation is completed  
❐ Erase Suspend & Resume: read/program other sectors be-  
fore an erase operation is completed  
Kword (64 KB) sectors + eight 4Kword (8KB) boot sectors  
❐ 32 Mb (uniform sector models): Sixty-four 32Kword (64 KB)  
sectors  
❐ 32 Mb (boot sector models): Sixty-three 32Kword (64 KB)  
sectors + eight 4Kword (8KB) boot sectors  
■ Enhanced VersatileI/O™ Control  
❐ Data# polling & toggle bits provide status  
❐ CFI (Common Flash Interface) compliant: allows host system  
to identify and accommodate multiple flash devices  
❐ All input levels (address, control, and DQ input levels) and  
outputs are determined by voltage on VIO input. VIO range is  
1.65 to VCC  
❐ Unlock Bypass Program command reduces overall multi-  
■ Compatibility with JEDEC standards  
❐ Provides pin out and software compatibility for single-power  
supply flash, and superior inadvertent write protection  
ple-word programming time  
■ Hardware features  
❐ WP#/ACC input accelerates programming time (when high  
voltage is applied) for greater throughput during system pro-  
duction. Protects first or last sector regardless of sector pro-  
tection settings on uniform sector models  
■ 100,000 erase cycles typical per sector  
■ 20-year data retention typical  
❐ Hardware reset input (RESET#) resets device  
❐ Ready/Busy# output (RY/BY#) detects program or erase cy-  
cle completion  
Performance Characteristics  
■ High performance  
❐ 90 ns access time  
❐ 8-word/16-byte page read buffer  
❐ 25 ns page read time  
❐ 16-word/32-byte write buffer which reduces overall program-  
ming time for multiple-word updates  
Cypress Semiconductor Corporation  
Document Number: 001-98525 Rev. *B  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised May 26, 2017  
1234567...78

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与S29GL032N11DFIV23相关器件

型号 品牌 获取价格 描述 数据表
S29GL032N11FAI010 SPANSION

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 		64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Pro
S29GL032N11FAI012 SPANSION

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 		64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Pro
S29GL032N11FAI013 SPANSION

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 		64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Pro
S29GL032N11FAI020 SPANSION

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 		64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Pro
S29GL032N11FAI022 SPANSION

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 		64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Pro
S29GL032N11FAI023 SPANSION

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 		64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Pro
S29GL032N11FAI030 SPANSION

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 		64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Pro
S29GL032N11FAI032 SPANSION

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 		64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Pro
S29GL032N11FAI033 SPANSION

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 		64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Pro
S29GL032N11FAI040 SPANSION

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 		64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Pro

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