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S29GL032M11TFIR3 PDF预览

S29GL032M11TFIR3

更新时间: 2024-01-24 16:56:41
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 光电二极管内存集成电路闪存
页数 文件大小 规格书
156页 4673K
描述
Flash, 2MX16, 110ns, PDSO48, TSOP-48

S29GL032M11TFIR3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TSSOP, TSSOP48,.8,20Reach Compliance Code:compliant
风险等级:5.76最长访问时间:110 ns
其他特性:IT ALSO OPERATES AT 2.7 TO 3.6 V SUPPLY FULL VOLTAGE RANGE备用内存宽度:8
启动块:TOP命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PDSO-G48JESD-609代码:e3
长度:18.4 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
湿度敏感等级:3功能数量:1
部门数/规模:8,63端子数量:48
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH页面大小:4/8 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:8K,64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.06 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:12 mm

S29GL032M11TFIR3 数据手册

 浏览型号S29GL032M11TFIR3的Datasheet PDF文件第2页浏览型号S29GL032M11TFIR3的Datasheet PDF文件第3页浏览型号S29GL032M11TFIR3的Datasheet PDF文件第4页浏览型号S29GL032M11TFIR3的Datasheet PDF文件第5页浏览型号S29GL032M11TFIR3的Datasheet PDF文件第6页浏览型号S29GL032M11TFIR3的Datasheet PDF文件第7页 
S29GLxxxM MirrorBitTM Flash Family  
S29GL256M, S29GL128M, S29GL064M, S29GL032M  
256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit,  
3.0 Volt-only Page Mode Flash Memory featuring  
0.23 um MirrorBit process technology  
Datasheet  
PRELIMINARY  
Distinctive Characteristics  
— 16-word/32-byte write buffer reduces overall  
programming time for multiple-word updates  
Low power consumption (typical values at 3.0 V, 5  
MHz)  
— 18 mA typical active read current (64 Mb, 32 Mb)  
— 25 mA typical active read current (256 Mb, 128 Mb)  
— 50 mA typical erase/program current  
— 1 µA typical standby mode current  
Architectural Advantages  
„
„
„
Single power supply operation  
— 3 volt read, erase, and program operations  
„
„
Manufactured on 0.23 um MirrorBit process  
technology  
SecSi(Secured Silicon) Sector region  
— 128-word/256-byte sector for permanent, secure  
identification through an 8-word/16-byte random  
Electronic Serial Number, accessible through a  
command sequence  
Package options  
— 40-pin TSOP  
— 48-pin TSOP  
— 56-pin TSOP  
— 64-ball Fortified BGA  
— 48-ball fine-pitch BGA  
— 63-ball fine-pitch BGA  
— May be programmed and locked at the factory or by  
the customer  
„
Flexible sector architecture  
— 256Mb: 512 32 Kword (64 Kbyte) sectors  
— 128Mb: 256 32 Kword (64 Kbyte) sectors  
Software & Hardware Features  
— 64Mb (uniform sector modules): 128 32 Kword (64  
Kbyte) sectors or 128 32 Kword sectors  
„
Software features  
— Program Suspend & Resume: read other sectors  
before programming operation is completed  
— Erase Suspend & Resume: read/program other  
sectors before an erase operation is completed  
— Data# polling & toggle bits provide status  
— CFI (Common Flash Interface) compliant: allows host  
system to identify and accommodate multiple flash  
devices  
— 64Mb (boot sector models): 127 32 Kword (64 Kbyte)  
sectors + 8 4Kword (8Kbyte) boot sectors  
— 32Mb (uniform sector models): 64 32Kword (64  
Kbyte) sectors of 64 32Kword sectors  
— 32Mb (boot sector models): 63 32Kword (64 Kbyte)  
sectors + 8 4Kword (8Kbyte) boot sectors  
„
Compatibility with JEDEC standards  
— Provides pinout and software compatibility for single-  
power supply flash, and superior inadvertent write  
protection  
— Unlock Bypass Program command reduces overall  
multiple-word programming time  
„
Hardware features  
— Sector Group Protection: hardware-level method of  
preventing write operations within a sector group  
„
„
100,000 erase cycles typical per sector  
20-year data retention typical  
Temporary Sector Unprotect: V -level method of  
ID  
charging code in locked sectors  
Performance Characteristics  
— WP#/ACC input accelerates programming time  
(when high voltage is applied) for greater throughput  
during system production. Protects first or last sector  
regardless of sector protection settings  
— Hardware reset input (RESET#) resets device  
— Ready/Busy# output (RY/BY#) detects program or  
erase cycle completion  
„
High performance  
— 90 ns access time (128Mb, 64Mb, 32Mb),  
100 ns access time (256Mb)  
— 4-word/8-byte page read buffer  
— 25 ns page read times (128Mb, 64Mb, 32Mb)  
— 30 ns page read times (256Mb)  
— 16-word/32-byte write buffer  
Publication Number S29GLxxxM_00 Revision A Amendment 3 Issue Date February 26, 2004  

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