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S25FL128SDSMFN001 PDF预览

S25FL128SDSMFN001

更新时间: 2024-12-02 09:40:19
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 内存集成电路
页数 文件大小 规格书
146页 4925K
描述
Flash,

S25FL128SDSMFN001 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.6
内存集成电路类型:FLASH编程电压:3 V
Base Number Matches:1

S25FL128SDSMFN001 数据手册

 浏览型号S25FL128SDSMFN001的Datasheet PDF文件第2页浏览型号S25FL128SDSMFN001的Datasheet PDF文件第3页浏览型号S25FL128SDSMFN001的Datasheet PDF文件第4页浏览型号S25FL128SDSMFN001的Datasheet PDF文件第5页浏览型号S25FL128SDSMFN001的Datasheet PDF文件第6页浏览型号S25FL128SDSMFN001的Datasheet PDF文件第7页 
S25FL128S/S25FL256S  
128 Mb (16 MB)/256 Mb (32 MB)  
3.0V SPI Flash Memory  
Features  
CMOS 3.0 Volt Core with Versatile I/O  
Data Retention  
20 Year Data Retention, minimum  
SPI with Multi-I/O  
Security features  
OTP array of 1024 bytes  
SPI Clock polarity and phase modes 0 and 3  
DDR option  
Extended Addressing: 24- or 32-bit address options  
Block Protection:  
Serial Command set and footprint compatible with  
S25FL-A, S25FL-K, and S25FL-P SPI families  
• Status Register bits to control protection against program  
or erase of a contiguous range of sectors.  
Multi I/O Command set and footprint compatible with  
• Hardware and software control options  
S25FL-P SPI family  
Advanced Sector Protection (ASP)  
• Individual sector protection controlled by boot code or  
password  
READ Commands  
Normal, Fast, Dual, Quad, Fast DDR, Dual DDR, Quad DDR  
AutoBoot - power up or reset and execute a Normal or Quad  
Cypress® 65 nm MirrorBit® Technology with Eclipse™  
Architecture  
read command automatically at a preselected address  
Common Flash Interface (CFI) data for configuration infor-  
mation.  
Core Supply Voltage: 2.7V to 3.6V  
Programming (1.5 MBps)  
256 or 512 Byte Page Programming buffer options  
Quad-Input Page Programming (QPP) for slow clock sys-  
tems  
Automatic ECC-internal hardware Error Correction Code  
generation with single bit error correction  
I/O Supply Voltage: 1.65V to 3.6V  
SO16 and FBGA packages  
Temperature Range / Grade:  
Industrial (40°C to +85°C)  
Industrial Plus (40°C to +105°C)  
Automotive AEC-Q100 Grade 3 (40°C to +85°C)  
Automotive AEC-Q100 Grade 2 (40°C to +105°C)  
Automotive AEC-Q100 Grade 1 (40°C to +125°C)  
Erase (0.5 to 0.65 MBps)  
Hybrid sector size option - physical set of thirty two 4-KB  
sectors at top or bottom of address space with all remaining  
sectors of 64 KB, for compatibility with prior generation S25-  
FL devices  
Uniform sector option - always erase 256-KB blocks for soft-  
ware compatibility with higher density and future devices.  
Packages (all Pb-free)  
16-lead SOIC (300 mil)  
WSON 6 8 mm  
BGA-24 6 8 mm  
• 5 5 ball (FAB024) and 4 6 ball (FAC024) footprint  
options  
Cycling Endurance  
100,000 Program-Erase Cycles, minimum  
• Known Good Die (KGD) and Known Tested Die  
Logic Block Diagram  
CS#  
SRAM  
SCK  
MirrorBit Array  
SI/IO0  
SO/IO1  
WP#/IO2  
Y Decoders  
Data Latch  
I/O  
Control  
Logic  
HOLD#/IO3  
Data Path  
RESET#  
Cypress Semiconductor Corporation  
Document Number: 001-98283 Rev. *Q  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised April 30, 2019  

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