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S25FL064LABMFI010 PDF预览

S25FL064LABMFI010

更新时间： 2024-11-07 18:45:35
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 时钟光电二极管内存集成电路
页数 文件大小 规格书
151页 1242K
描述
Flash, 16MX4, PDSO8, SOIC-8

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S25FL064LABMFI010 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SOP,Reach Compliance Code：compliant
HTS代码：8542.32.00.51风险等级：1.63
其他特性：IT ALSO HAVE X1 MEMORY WIDTH备用内存宽度：2
最大时钟频率 (fCLK)：108 MHzJESD-30 代码：S-PDSO-G8
JESD-609代码：e3长度：5.28 mm
内存密度：67108864 bit内存集成电路类型：FLASH
内存宽度：4功能数量：1
端子数量：8字数：16777216 words
字数代码：16000000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：16MX4封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装形状：SQUARE
封装形式：SMALL OUTLINE并行/串行：SERIAL
峰值回流温度（摄氏度）：NOT SPECIFIED编程电压：3 V
座面最大高度：2.16 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：5.28 mmBase Number Matches：1

S25FL064LABMFI010 数据手册

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S25FL064L  
64-Mbit (8-Mbyte)  
3.0 V FL-L SPI Flash Memory  
General Description  
The Cypress FL-L Family devices are Flash Non-volatile Memory products using:  
Floating Gate technology  
65-nm process lithography  
The FL-L family connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output  
(Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit wide Quad I/O (QIO), and Quad Peripheral  
Interface (QPI) commands. In addition, there are Double Data Rate (DDR) read commands for QIO and QPI that transfer address  
and read data on both edges of the clock.  
The architecture features a Page Programming Buffer that allows up to 256-bytes to be programmed in one operation and provides  
individual 4 KB sector, 32 KB half block sector, 64 KB block sector, or entire chip erase.  
By using FL-L family devices at the higher clock rates supported, with Quad commands, the instruction read transfer rate can match  
or exceed traditional parallel interface, asynchronous, NOR Flash memories, while reducing signal count dramatically.  
The FL-L family products offer high densities coupled with the flexibility and fast performance required by a variety of mobile or  
embedded applications. Provides an ideal storage solution for systems with limited space, signal connections, and power. These  
memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM,  
executing code directly (XIP), and storing re-programmable data.  
Features  
Serial Peripheral Interface (SPI) with Multi-I/O  
– Clock polarity and phase modes 0 and 3  
– Double Data Rate (DDR) option  
– Four security regions of 256-bytes each outside the main Flash  
array  
– Legacy block protection: Block range  
– Individual and region protection  
– Quad peripheral interface (QPI) option  
– Extended addressing: 24- or 32-bit address options  
– Serial command subset and footprint compatible with S25FL-A,  
S25FL1-K, S25FL-P, S25FL-S, and S25FS-S SPI families  
– Multi I/O command subset and footprint compatible with S25FL-P,  
S25FL-S and S25FS-S SPI families  
Read  
– Individual block lock: Volatile individual sector/block  
– Pointer region: Non-volatile sector/block range  
– Power supply Lock-down, password, or permanent protection  
of security regions 2 and 3 and pointer region  
Technology  
– 65-nm Floating Gate technology  
Single Supply Voltage with CMOS I/O  
– 2.7 V to 3.6 V  
– Commands: Normal, Fast, Dual I/O, Quad I/O, DualO, QuadO,  
DDR Quad I/O  
– Modes: Burst wrap, Continuous (XIP), QPI  
– Serial flash discoverable parameters (SFDP) for configuration  
information  
Temperature Range / Grade  
– Industrial (–40°C to +85°C)  
– Industrial Plus (–40°C to +105°C)  
– Automotive, AEC-Q100 Grade 3 (–40°C to +85°C)  
– Automotive, AEC-Q100 Grade 2 (–40°C to +105°C)  
– Automotive, AEC-Q100 Grade 1 (–40°C to +125°C)  
Packages (All Pb-free)  
Program Architecture  
– 256-Bytes page programming buffer  
– Program suspend and resume  
Erase Architecture  
– Uniform 4 KB sector erase  
– 8-lead SOIC 208 mil (SOC008)  
– Uniform 32 KB half block erase  
– Uniform 64 KB block erase  
– Chip erase  
– 16-lead SOIC 300 mil (SO3016)  
– USON 4 4 mm (UNF008)  
– WSON 5 x 6 mm (WND008)  
– Erase suspend and resume  
– BGA-24 6 8 mm  
100,000 Program-Erase Cycles, minimum  
20 Year Data Retention, minimum  
Security Features  
– 5 5 ball (FAB024) footprint  
– 4 6 ball (FAC024) footprint  
– Known good die and known tested die  
– Status and configuration Register protection  
Cypress Semiconductor Corporation  
Document Number: 002-12878 Rev. *C  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised May 15, 2017  
 
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