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S2055N PDF预览

S2055N

更新时间: 2024-11-06 06:09:43
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 119K
描述
Silicon NPN Power Transistors

S2055N 数据手册

 浏览型号S2055N的Datasheet PDF文件第2页浏览型号S2055N的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
S2055N  
DESCRIPTION  
·
·With TO-3P(H)IS package  
·High voltage,high speed  
·Low collector saturation voltage  
·Built-in damper diode  
APPLICATIONS  
·Color TV horizontal output applications  
·Color TV switching regulator applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (TO-3P(H)IS) and symbol  
3
Absolute maximum ratings (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
UNIT  
V
Open emitter  
Open base  
1500  
700  
V
Open collector  
5
V
8
15  
A
ICM  
Collector current-peak  
Base current  
A
IB  
4
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
50  
W
150  
-55~150  
Tj  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-C  
Thermal resistance from junction to case  
2.5  
/W  

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